EGP10CHE3/73 Allicdata Electronics
Allicdata Part #:

EGP10CHE3/73-ND

Manufacturer Part#:

EGP10CHE3/73

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Semiconductor Diodes Division
Short Description: DIODE GEN PURP 150V 1A DO204AL
More Detail: Diode Standard 150V 1A Through Hole DO-204AL (DO-4...
DataSheet: EGP10CHE3/73 datasheetEGP10CHE3/73 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: SUPERECTIFIER®
Packaging: Tape & Box (TB) 
Part Status: Obsolete
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 150V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 950mV @ 1A
Speed: Fast Recovery = 200mA (Io)
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 5µA @ 150V
Capacitance @ Vr, F: 22pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 150°C
Base Part Number: EGP10C
Description

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EGP10CHE3/73 is a single rectifier diode that belongs to a unique type of diode known as Schottky diodes (aka Schottky barrier diodes or SBDs). These type of diodes have a variety of advantages over the more common silicon-based rectifier diodes, such as much lower forward voltage drop and faster recovery times. These make them an ideal choice for high-sharing current applications, especially in high-frequency circuitry.

The EGP10CHE3/73 is a fast-recovery type of Schottky rectifier diode, which allows it to recover from a high-amperage current much more quickly than silicon-based rectifier diodes. This makes it well suited for a range of high-frequency applications, such as power supply switching, power regeneration, clamping circuits, motor controllers, and many more.

The EGP10CHE3/73 is capable of passing currents of up to 10 A, allowing it to support a wide range of applications. Its high current passing capability is enabled by its low forward voltage drop – the voltage drop of the EGP10CHE3/73 is only 0.5 V, compared to 1 V for silicon-based rectifier diodes.

The EGP10CHE3/73 is also suitable for reverse voltage applications, with a maximum reverse voltage rating of up to 73 V. The diode also has a relatively low reverse leakage current, which makes it ideal for use in applications such as DC/DC converters and power supplies that require low reverse current.

The EGP10CHE3/73 is capable of working at temperatures of up to 150°C, allowing it to be used in a wide range of applications, including automotive and aerospace applications. The diode also has a low capacitance, making it well suited for use in high-frequency applications.

The working principle of a rectifier diode is quite simple. It is essentially an electrically symmetric two-terminal semiconductor device. When a forward voltage is applied to the electrode, a current starts to pass through the diode and thus, the diode is said to become conducting. In the reverse voltage, the diode becomes reverse-biased and the current is blocked, thus the diode becomes non-conducting.

In the case of the EGP10CHE3/73, this diode is designed for efficient operation in both forward and reverse voltage applications. It is also designed to withstand high temperatures, making it suitable for a range of automotive and aerospace applications.

To sum up, the EGP10CHE3/73 is a single rectifier Schottky diode, capable of passing currents of up to 10 A with a low forward voltage drop. It is well suited to both low and high frequency applications, and its maximum reverse voltage rating of up to 73 V makes it suitable for reverse voltage applications, such as DC/DC converters and power supplies. The diode also has a low capacitance and is capable of working at temperatures of up to 150°C. This makes it ideal for a wide range of high-frequency and high-temperature applications.

The specific data is subject to PDF, and the above content is for reference

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