Allicdata Part #: | EGP10FHE3/73-ND |
Manufacturer Part#: |
EGP10FHE3/73 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE GEN PURP 300V 1A DO204AL |
More Detail: | Diode Standard 300V 1A Through Hole DO-204AL (DO-4... |
DataSheet: | EGP10FHE3/73 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | SUPERECTIFIER® |
Packaging: | Tape & Box (TB) |
Part Status: | Obsolete |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 300V |
Current - Average Rectified (Io): | 1A |
Voltage - Forward (Vf) (Max) @ If: | 1.25V @ 1A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 50ns |
Current - Reverse Leakage @ Vr: | 5µA @ 300V |
Capacitance @ Vr, F: | 15pF @ 4V, 1MHz |
Mounting Type: | Through Hole |
Package / Case: | DO-204AL, DO-41, Axial |
Supplier Device Package: | DO-204AL (DO-41) |
Operating Temperature - Junction: | -65°C ~ 150°C |
Base Part Number: | EGP10F |
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Diodes – Rectifiers – Single
EGP10FHE3/73 application field and working principle
EGP10FHE3/73 is a single-device rectifier whose application fields include the semiconductor industry, development of power MOSFETs and IGBTs, and industrial electronics. This rectifier can handle high current charging needs that other types of devices cannot meet.
A rectifier is a type of electronic component composed of a diode or combination of diodes that regulate the flow of electricity. The EGP10FHE3/73 rectifier performs a single-direction current, transforming alternating current into direct current with high accuracy. This type of rectifier is especially useful for applications that require precision and reliable power supply, including engine start circuits and automotive electronics.
The working principle of the rectifier includes four different parts: a semiconductor diode, an anode, a cathode, and the rectifying element. The anode and cathode are the two terminals of the diode that allow current to flow in one way, meaning electrons can only move from the anode to the cathode, and not vice versa. The rectifying element is the part that is connected to both anode and cathode and filters the current, and is also known as the bridge element. The semiconductor diode works by having a layer of material, usually silicon, between the anode and cathode. This material reacts to the amount of voltage, and in doing so, creates a junction in which electrons can pass from the anode to cathode.
The EGP10FHE3/73 rectifier is designed to handle extremely high current and to regulate the process with maximum accuracy. This makes the device suitable for applications that need a powerful and consistent power supply, with safety and longevity as its main specifications. This makes the EGP10FHE3/73 ideal for powering up MOSFET and IGBTs, eliminating the inefficiencies of more traditional circuit constructions.
An important thing to take into account is the temperature limitations of the rectifier. As a rule of thumb, the current should not exceed a specific temperature, measured in degrees Celsius. This is due to the way the diode works and the semiconductor material used, and it can cause serious damage and malfunctions if exceeded. Therefore it is important to monitor the device’s performance and temperature.
Overall, the EGP10FHE3/73 rectifier is a powerful and accurate device capable of meeting the needs of high-current applications. thanks to its bridge element and semiconductor construction, it is an ideal choice for MOSFET and IGBTs, automotive electronics, and engine start circuits. Although designed to work in precise conditions, it is important to monitor the temperature and the current consumed by the device, in order to avoid any potential malfunctions.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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EGP10G | ON Semicondu... | 0.08 $ | 1000 | DIODE GEN PURP 400V 1A DO... |
EGP10K | ON Semicondu... | 0.06 $ | 1000 | DIODE GEN PURP 800V 1A DO... |
EGP10F | ON Semicondu... | 0.06 $ | 1000 | DIODE GEN PURP 300V 1A DO... |
EGP10D | ON Semicondu... | 0.06 $ | 1000 | DIODE GEN PURP 200V 1A DO... |
EGP10B | ON Semicondu... | 0.06 $ | 1000 | DIODE GEN PURP 100V 1A DO... |
EGP10C | ON Semicondu... | 0.07 $ | 1000 | DIODE GEN PURP 150V 1A DO... |
EGP10D-E3/54 | Vishay Semic... | 0.07 $ | 1000 | DIODE GEN PURP 200V 1A DO... |
EGP10AHE3/73 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 50V 1A DO2... |
EGP10BHE3/73 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 100V 1A DO... |
EGP10CHE3/73 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 150V 1A DO... |
EGP10DHE3/73 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 200V 1A DO... |
EGP10FHE3/73 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 300V 1A DO... |
EGP10GHE3/73 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 400V 1A DO... |
EGP10AHE3/54 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 50V 1A DO2... |
EGP10BEHE3/54 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 100V 1A DO... |
EGP10BHE3/54 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 100V 1A DO... |
EGP10CEHE3/54 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 150V 1A DO... |
EGP10CHE3/54 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 150V 1A DO... |
EGP10DEHE3/54 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 200V 1A DO... |
EGP10DHE3/54 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 200V 1A DO... |
EGP10FHE3/54 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 300V 1A DO... |
EGP10GEHE3/54 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 400V 1A DO... |
EGP10GHE3/54 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 400V 1A DO... |
EGP10A-E3/54 | Vishay Semic... | -- | 1000 | DIODE GEN PURP 50V 1A DO2... |
EGP10B-E3/54 | Vishay Semic... | 0.06 $ | 1000 | DIODE GEN PURP 100V 1A DO... |
EGP10C-E3/54 | Vishay Semic... | 0.08 $ | 1000 | DIODE GEN PURP 150V 1A DO... |
EGP10F-E3/54 | Vishay Semic... | 0.06 $ | 1000 | DIODE GEN PURP 300V 1A DO... |
EGP10A-E3/73 | Vishay Semic... | 0.07 $ | 1000 | DIODE GEN PURP 50V 1A DO2... |
EGP10B-E3/73 | Vishay Semic... | -- | 1000 | DIODE GEN PURP 100V 1A DO... |
EGP10C-E3/73 | Vishay Semic... | 0.07 $ | 1000 | DIODE GEN PURP 150V 1A DO... |
EGP10D-E3/73 | Vishay Semic... | -- | 1000 | DIODE GEN PURP 200V 1A DO... |
EGP10F-E3/73 | Vishay Semic... | 0.07 $ | 1000 | DIODE GEN PURP 300V 1A DO... |
EGP10GE-E3/54 | Vishay Semic... | 0.11 $ | 1000 | DIODE GEN PURP 400V 1A DO... |
EGP10G-E3/54 | Vishay Semic... | 0.1 $ | 1000 | DIODE GEN PURP 400V 1A DO... |
EGP10BE-E3/54 | Vishay Semic... | 0.1 $ | 1000 | DIODE GEN PURP 100V 1A DO... |
EGP10CE-E3/54 | Vishay Semic... | 0.1 $ | 1000 | DIODE GEN PURP 150V 1A DO... |
EGP10DE-E3/54 | Vishay Semic... | 0.1 $ | 1000 | DIODE GEN PURP 200V 1A DO... |
EGP10G-E3/73 | Vishay Semic... | -- | 1000 | DIODE GEN PURP 400V 1A DO... |
EGP10D-E3/53 | Vishay Semic... | 0.11 $ | 1000 | DIODE GEN PURP 200V 1A DO... |
EGP10G-E3/53 | Vishay Semic... | 0.11 $ | 1000 | DIODE GEN PURP 400V 1A DO... |
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