EGP10G-TP Discrete Semiconductor Products |
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| Allicdata Part #: | EGP10G-TPTR-ND |
| Manufacturer Part#: |
EGP10G-TP |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Micro Commercial Co |
| Short Description: | DIODE GEN PURP 400V 1A DO41 |
| More Detail: | Diode Standard 400V 1A Through Hole DO-41 |
| DataSheet: | EGP10G-TP Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Series: | -- |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Obsolete |
| Diode Type: | Standard |
| Voltage - DC Reverse (Vr) (Max): | 400V |
| Current - Average Rectified (Io): | 1A |
| Voltage - Forward (Vf) (Max) @ If: | 1.25V @ 1A |
| Speed: | Fast Recovery = 200mA (Io) |
| Reverse Recovery Time (trr): | 50ns |
| Current - Reverse Leakage @ Vr: | 5µA @ 400V |
| Capacitance @ Vr, F: | -- |
| Mounting Type: | Through Hole |
| Package / Case: | DO-204AL, DO-41, Axial |
| Supplier Device Package: | DO-41 |
| Operating Temperature - Junction: | -- |
| Base Part Number: | EGP10G |
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An EGP10G-TP is a rectifier diode from the single diode family. This class of diodes is used for high frequency applications such as switching power supplies, lighting, high-frequency communication systems, LED driver and motor drives. In particular, the EGP10G-TP is designed to handle a current up to 10A and block voltages ranging from 20V to 1000V. Its pass voltage is up to 173V.
The EGP10G-TP is a silicon-based, ultra-fast rectifier diode, capable of conducting and blocking current at a high frequency rate. It has been manufactured with advanced planar construction and on-chip shielded metal electrodes to offer low capacitance and enhanced EMI/RFI noise immunity. Additionally, it is designed to stay cool during operation, allowing for superior performance and reliability.
At the core of the EGP10G-TP is its stainless steel lead frame, with thermal conductivity optimized for quick heat dissipation. This, coupled with its unique package design, eliminates potential hot spots and improves thermal performance even under stressful conditions. Furthermore, the diodes are hermetically sealed in a glass envelope, which eliminates the possibility of air contamination.
The working principle of the EGP10G-TP is relatively straightforward. When a positive voltage is applied to the diode, a current known as the “forward current” passes through it. This current then passes through the semiconductor material, creating a conduction path known as the “forward bias”. On the other hand, when the reverse voltage is applied to the diode, the current known as the “reverse current” does not pass through it. This is due to the depletion region formed in the semiconductor material, which blocks any current from passing through. This phenomenon is known as the “reverse bias.”
The main application for the EGP10G-TP is in the field of power conversion. In particular, it is used in switching power supplies and motor drives, as it can handle large currents and block voltages even at fast switching frequencies. This makes it particularly suitable for demanding applications such as lighting, high-frequency communication systems, and LED drivers. Additionally, it is also well suited for projects requiring EMI/RFI immunity, as it has low capacitance and advanced built-in shielding to reduce interference.
The EGP10G-TP is a high performance, ultra-fast rectifier diode from the single diode family. It is designed to handle up to 10A of current and block voltages ranging from 20V to 1000V while maintaining a maximum pass voltage of 173V. Its unique on-chip shielded metal electrodes and optimized thermal design allows for improved EMI/RFI noise immunity, enhanced thermal performance, and ease of use. Its main application is in power conversion, particularly in switching power supplies,LED drivers and motor drives.
The specific data is subject to PDF, and the above content is for reference
| Part Number | Manufacturer | Price | Quantity | Description |
|---|
| EGP10B | ON Semicondu... | 0.06 $ | 1000 | DIODE GEN PURP 100V 1A DO... |
| EGP10F-M3/73 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 300V 1A DO... |
| EGP10GHE3/53 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 400V 1A DO... |
| EGP10D-M3/54 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 200V 1A DO... |
| EGP10C | ON Semicondu... | 0.07 $ | 1000 | DIODE GEN PURP 150V 1A DO... |
| EGP10A-E3/73 | Vishay Semic... | 0.07 $ | 1000 | DIODE GEN PURP 50V 1A DO2... |
| EGP10CHM3/54 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 150V 1A DO... |
| EGP10B-M3/73 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 100V 1A DO... |
| EGP10BEHM3/73 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 100V 1A DO... |
| EGP10G-M3/54 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 400V 1A DO... |
| EGP10G-E3/54 | Vishay Semic... | 0.1 $ | 1000 | DIODE GEN PURP 400V 1A DO... |
| EGP10DHM3/73 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 200V 1A DO... |
| EGP10G-M3/73 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 400V 1A DO... |
| EGP10C-M3/54 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 150V 1A DO... |
| EGP10CHE3/73 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 150V 1A DO... |
| EGP10F-TP | Micro Commer... | 0.0 $ | 1000 | DIODE GEN PURP 300V 1A DO... |
| EGP10BHM3/54 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 100V 1A DO... |
| EGP10FHE3/73 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 300V 1A DO... |
| EGP10G-TP | Micro Commer... | 0.0 $ | 1000 | DIODE GEN PURP 400V 1A DO... |
| EGP10DHE3/53 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 200V 1A DO... |
| EGP10AHM3/73 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 50V 1A DO2... |
| EGP10GHE3/54 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 400V 1A DO... |
| EGP10AHM3/54 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 50V 1A DO2... |
| EGP10CEHM3/73 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 150V 1A DO... |
| EGP10GE-M3/73 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 400V 1A DO... |
| EGP10D-TP | Micro Commer... | 0.0 $ | 1000 | DIODE GEN PURP 200V 1A DO... |
| EGP10CHE3/54 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 150V 1A DO... |
| EGP10DE-M3/54 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 200V 1A DO... |
| EGP10GHM3/73 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 400V 1A DO... |
| EGP10CE-M3/73 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 150V 1A DO... |
| EGP10B-M3/54 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 100V 1A DO... |
| EGP10GE-M3/54 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 400V 1A DO... |
| EGP10FE-M3/73 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURPOSE DO204AL... |
| EGP10G-E3/53 | Vishay Semic... | 0.11 $ | 1000 | DIODE GEN PURP 400V 1A DO... |
| EGP10D-E3/54 | Vishay Semic... | 0.07 $ | 1000 | DIODE GEN PURP 200V 1A DO... |
| EGP10FHM3/73 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 300V 1A DO... |
| EGP10D-E3/53 | Vishay Semic... | 0.11 $ | 1000 | DIODE GEN PURP 200V 1A DO... |
| EGP10AE-M3/73 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURPOSE DO204AL... |
| EGP10BHE3/73 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 100V 1A DO... |
| EGP10J | ON Semicondu... | 0.0 $ | 1000 | DIODE GEN PURP 600V 1A DO... |
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EGP10G-TP Datasheet/PDF