Allicdata Part #: | EGP10G-E3/53-ND |
Manufacturer Part#: |
EGP10G-E3/53 |
Price: | $ 0.11 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE GEN PURP 400V 1A DO204AL |
More Detail: | Diode Standard 400V 1A Through Hole DO-204AL (DO-4... |
DataSheet: | EGP10G-E3/53 Datasheet/PDF |
Quantity: | 1000 |
9000 +: | $ 0.09304 |
Series: | Automotive, AEC-Q101 |
Packaging: | Tape & Box (TB) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 400V |
Current - Average Rectified (Io): | 1A |
Voltage - Forward (Vf) (Max) @ If: | 1.25V @ 1A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 50ns |
Current - Reverse Leakage @ Vr: | 5µA @ 400V |
Capacitance @ Vr, F: | 15pF @ 4V, 1MHz |
Mounting Type: | Through Hole |
Package / Case: | DO-204AL, DO-41, Axial |
Supplier Device Package: | DO-204AL (DO-41) |
Operating Temperature - Junction: | -65°C ~ 150°C |
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EGP10G-E3/53 is a single rectifier diode specifically designed for low-voltage power applications, such as mobile phone chargers and adapters. The single diode component consists of two P-type and N-type semiconductor layers sandwiched together to form a PN junction. The PN junction facilitates the rectification of electrical current, which helps to regulate current flow in the desired direction.
The EGP10G-E3/53\'s low on-resistance and fast switching speeds combine to provide a high degree of efficiency, allowing for faster charging times of mobile devices and higher levels of efficiency in the circuits themselves. The diode is further enhanced by the use of chip capacitance, which helps reduce the amount of spike noise generated from its utilization in high-frequency applications. Another unique feature of the diode is its ability to withstand high reverse voltages, making it ideal for use in applications that require a large current flow.
In terms of applications, the main use for the EGP10G-E3/53 is in the field of portable devices such as cellphones, tablets, and laptops. The component is designed to provide greater protection against overcharges and undercharges, ensuring that the device can remain powered whether in standby or in use. In addition, the component also functions to protect the circuit making up the device against any unexpected or excessive overvoltage.
In terms of its working principle, the EGP10G-E3/53 operates on the principle of reverse current rectification, wherein a reverse bias, usually between 0.2 V and 1 V, is applied across the junction of the two diodes. This causes the junction to become forward biased, allowing current to flow from the anode to the cathode; this is the basis for the rectification of the current. As the current passes through the junction, the voltage is gradually reduced until it reaches a certain point where the resistance of the junction is equalized and the current stops flowing.
The EGP10G-E3/53 is capable of withstanding up to 1A of forward current, with a maximum reverse voltage of 30V. It has a low forward voltage (Vf) of 1.3V and a reverse recovery time (trr) of 37 ns. The device also offers a wide range of temperature ranges, ranging from -55°C up to +125°C, making it suitable for use in many environments. The device is made up of a total of ten pinouts, for easy mounting.
The EGP10G-E3/53 is an ideal device for providing protection against overcharging and undercharging of portable devices, as well as for permitting fast switching operations in high frequency applications. With its strong surge protection capabilities and versatile temperature ranges, it is well suited for use in a variety of applications and is likely to save both time and money in the long run.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
EGP10G | ON Semicondu... | 0.08 $ | 1000 | DIODE GEN PURP 400V 1A DO... |
EGP10K | ON Semicondu... | 0.06 $ | 1000 | DIODE GEN PURP 800V 1A DO... |
EGP10F | ON Semicondu... | 0.06 $ | 1000 | DIODE GEN PURP 300V 1A DO... |
EGP10D | ON Semicondu... | 0.06 $ | 1000 | DIODE GEN PURP 200V 1A DO... |
EGP10B | ON Semicondu... | 0.06 $ | 1000 | DIODE GEN PURP 100V 1A DO... |
EGP10C | ON Semicondu... | 0.07 $ | 1000 | DIODE GEN PURP 150V 1A DO... |
EGP10D-E3/54 | Vishay Semic... | 0.07 $ | 1000 | DIODE GEN PURP 200V 1A DO... |
EGP10AHE3/73 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 50V 1A DO2... |
EGP10BHE3/73 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 100V 1A DO... |
EGP10CHE3/73 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 150V 1A DO... |
EGP10DHE3/73 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 200V 1A DO... |
EGP10FHE3/73 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 300V 1A DO... |
EGP10GHE3/73 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 400V 1A DO... |
EGP10AHE3/54 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 50V 1A DO2... |
EGP10BEHE3/54 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 100V 1A DO... |
EGP10BHE3/54 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 100V 1A DO... |
EGP10CEHE3/54 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 150V 1A DO... |
EGP10CHE3/54 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 150V 1A DO... |
EGP10DEHE3/54 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 200V 1A DO... |
EGP10DHE3/54 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 200V 1A DO... |
EGP10FHE3/54 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 300V 1A DO... |
EGP10GEHE3/54 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 400V 1A DO... |
EGP10GHE3/54 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 400V 1A DO... |
EGP10A-E3/54 | Vishay Semic... | -- | 1000 | DIODE GEN PURP 50V 1A DO2... |
EGP10B-E3/54 | Vishay Semic... | 0.06 $ | 1000 | DIODE GEN PURP 100V 1A DO... |
EGP10C-E3/54 | Vishay Semic... | 0.08 $ | 1000 | DIODE GEN PURP 150V 1A DO... |
EGP10F-E3/54 | Vishay Semic... | 0.06 $ | 1000 | DIODE GEN PURP 300V 1A DO... |
EGP10A-E3/73 | Vishay Semic... | 0.07 $ | 1000 | DIODE GEN PURP 50V 1A DO2... |
EGP10B-E3/73 | Vishay Semic... | -- | 1000 | DIODE GEN PURP 100V 1A DO... |
EGP10C-E3/73 | Vishay Semic... | 0.07 $ | 1000 | DIODE GEN PURP 150V 1A DO... |
EGP10D-E3/73 | Vishay Semic... | -- | 1000 | DIODE GEN PURP 200V 1A DO... |
EGP10F-E3/73 | Vishay Semic... | 0.07 $ | 1000 | DIODE GEN PURP 300V 1A DO... |
EGP10GE-E3/54 | Vishay Semic... | 0.11 $ | 1000 | DIODE GEN PURP 400V 1A DO... |
EGP10G-E3/54 | Vishay Semic... | 0.1 $ | 1000 | DIODE GEN PURP 400V 1A DO... |
EGP10BE-E3/54 | Vishay Semic... | 0.1 $ | 1000 | DIODE GEN PURP 100V 1A DO... |
EGP10CE-E3/54 | Vishay Semic... | 0.1 $ | 1000 | DIODE GEN PURP 150V 1A DO... |
EGP10DE-E3/54 | Vishay Semic... | 0.1 $ | 1000 | DIODE GEN PURP 200V 1A DO... |
EGP10G-E3/73 | Vishay Semic... | -- | 1000 | DIODE GEN PURP 400V 1A DO... |
EGP10D-E3/53 | Vishay Semic... | 0.11 $ | 1000 | DIODE GEN PURP 200V 1A DO... |
EGP10G-E3/53 | Vishay Semic... | 0.11 $ | 1000 | DIODE GEN PURP 400V 1A DO... |
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