EGP50CHE3/54 Allicdata Electronics
Allicdata Part #:

EGP50CHE3/54-ND

Manufacturer Part#:

EGP50CHE3/54

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Semiconductor Diodes Division
Short Description: DIODE GEN PURP 150V 5A GP20
More Detail: Diode Standard 150V 5A Through Hole GP20
DataSheet: EGP50CHE3/54 datasheetEGP50CHE3/54 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: SUPERECTIFIER®
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 150V
Current - Average Rectified (Io): 5A
Voltage - Forward (Vf) (Max) @ If: 950mV @ 5A
Speed: Fast Recovery = 200mA (Io)
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 5µA @ 150V
Capacitance @ Vr, F: 95pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-201AA, DO-27, Axial
Supplier Device Package: GP20
Operating Temperature - Junction: -65°C ~ 150°C
Base Part Number: EGP50C
Description

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The EGP50CHE3/54 is a single rectifier diode used in various applications. This article will summarize the device\'s application field and working principle.

Application Field

The EGP50CHE3/54 is a full-bridge rectifier diode for use in automotive applications such as LED lighting, LED headlamps, and LED daytime running lights. It can also be used in on-board battery chargers and solar applications. The diode is capable of continuous forward current of 50A and has a reverse surge current capability of 250A. It has a built-in protection feature to protect against over-temperature, which makes it ideal for use in extreme environments. Its low forward voltage drop of 0.7V makes it suitable for DC-DC converters.

Working Principle

The EGP50CHE3/54 works by allowing current to flow in only one direction. It does this by using two layers of semiconductor material – one layer for the N-type and one for the P-type. When a voltage is applied across the terminals, electrons from the N-type semiconductor are forced towards the P-type semiconductor, thus creating an electric field. This electric field further guides electrons from the N-type semiconductor towards the P-type semiconductor, thus allowing current to flow in one direction only. As the forward voltage increases, the electric field also gets stronger, thus allowing for more current to flow. In this way, the EGP50CHE3/54 is able to regulate the current. It also has a reverse breakdown voltage of approximately 40V, making it suitable for use in situations where reverse conduction can occur.

The EGP50CHE3/54 is a single rectifier diode with a variety of applications. Its low forward voltage drop, reverse breakdown voltage, and built-in protection feature make it an ideal choice for automotive applications. Its high surge current capability also makes it suitable for use in on-board battery chargers and solar applications. In this way, the EGP50CHE3/54 is an ideal choice for a variety of applications.

The specific data is subject to PDF, and the above content is for reference

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