EGP51C-E3/D

Series:	SUPERECTIFIER®
Part Status:	Active
Diode Type:	Standard
Voltage - DC Reverse (Vr) (Max):	150V
Current - Average Rectified (Io):	5A
Voltage - Forward (Vf) (Max) @ If:	960mV @ 5A
Speed:	Fast Recovery = 200mA (Io)
Reverse Recovery Time (trr):	50ns
Current - Reverse Leakage @ Vr:	5µA @ 150V
Capacitance @ Vr, F:	117pF @ 4V, 1MHz
Mounting Type:	Through Hole
Package / Case:	DO-201AD, Axial
Supplier Device Package:	DO-201AD
Operating Temperature - Junction:	-65°C ~ 175°C

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EGP51C-E3/D, a single rectifier diode, is suitable for application to commercial and industrial environments. It is designed with a dual JEDEC-compliant standard configuration that makes it highly suitable for a variety of applications. The diode has a 500mA, 55V voltage rating and a maximum reverse recovery time of 5.8ns. The wide operating temperature range of -55°C to +125°C ensures that it can be used in various environments, including outdoor application. Its low cost and reduced number of components makes it cost efficient for power and energy conversion applications. Its robust construction and low thermal resistance make it reliable for use in industrial and automotive applications, which require a high degree of performance and durability. The uniform package dimensions permit its integration into standard product designs and improve thermal control. The diode\'s high peak reverse current and short reverse recovery time make it compatible with high input capacitor-only constant-frequency converter applications. The diode possesses excellent characteristics as far as leakage current and reverse recovery time are concerned. It also has a low thermal resistance and very low capacitance to extend its operating temperature range. The high surge current capability also permits its use as surge suppression diodes and as an electrostatic discharge protection devices. The diode\'s working principle is based on the diode\'s construction. A PN junction is formed when two different types of semiconductor material are joined together. When forward-biased, electrons move from the N-side to the P-side, creating a low resistance path for the current flow. When reverse-biased, the junction is unable to conduct current, which creates an open resistance path. Rectifier diodes use this principle to convert alternating current (AC) to direct current (DC) by allowing current to flow in only one direction. EGP51C-E3/D is well-suited for use in high-power AC-DC circuits to provide efficient conversion of AC power to DC power on a single diode basis. It can be used for AC-DC rectification in high-power, low-noise inertialess power conversion applications. Its low leakage current is ideal for medical and audio equipment where noise-free operation is required. In conclusion, EGP51C-E3/D is a single-rectifier diode that is designed with a dual JEDEC-compliant standard configuration to make it highly suitable for a range of commercial and industrial applications. It has a wide operating temperature range and low thermal resistance, making it reliable for automotive and industrial use. Its excellent characteristics, such as low leakage current and short reverse recovery time, make it suitable for a variety of applications. Its working principle is based on the PN junction formation of a diode and it is used for AC-DC rectification for power and energy conversion applications.

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