EGP50F-E3/54 Allicdata Electronics
Allicdata Part #:

EGP50F-E3/54-ND

Manufacturer Part#:

EGP50F-E3/54

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Semiconductor Diodes Division
Short Description: DIODE GEN PURP 300V 5A GP20
More Detail: Diode Standard 300V 5A Through Hole GP20
DataSheet: EGP50F-E3/54 datasheetEGP50F-E3/54 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: SUPERECTIFIER®
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 300V
Current - Average Rectified (Io): 5A
Voltage - Forward (Vf) (Max) @ If: 1.25V @ 5A
Speed: Fast Recovery = 200mA (Io)
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 5µA @ 300V
Capacitance @ Vr, F: 75pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-201AA, DO-27, Axial
Supplier Device Package: GP20
Operating Temperature - Junction: -65°C ~ 150°C
Base Part Number: EGP50F
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Diodes are essential in a wide range of applications, including rectifiers, voltage regulation, EMI suppression, and signal processing. The EGP50F-E3/54 is a diode rectifier particularly suited for applications such as CompactPCI, power supplies, and buck converters. Its features of low forward voltage, low reverse leakage current, fast recovery, and high voltage and current ratings make it suitable for such demanding applications.

EGP50F-E3/54 is a single, ultrafast recovery rectifiers with a forward voltage of 1.2 140V at 125mA, a reverse leakage current of 10μA at 140V, and a recovery time of 10ns. It has an SOIC-8 package and is designed to meet the most demanding applications that require the highest reliability and performance. The maximum surge current is rated at 5A for 200ms, ensuring excellent power handling capability.

The EGP50F-E3/54 can be used in a variety of applications including switch mode power supplies, voltage regulation, DC-DC converters, consumer electronics, and more. In these types of applications, the EGP50F-E3/54 can be utilized to provide improved efficiency and reduce power dissipation through its ultrafast switching capabilities. In addition, it is capable of handling large currents, making it suitable for high efficiency, high power applications.

The working principle of the EGP50F-E3/54 is based on the same principle as that of any other rectifier diode. The forward voltage drop across the junction of the diode determines the amount of current that can flow through it. The voltage drop depends on the current through the diode as well as the temperature of the environment. The reverse leakage current is a measure of the current flow in the reverse direction when the diode is reverse biased, or has no current flowing through it. The reverse leakage current is a function of the temperature of the environment and of the voltage placed across the junction.

The EGP50F-E3/54 diode is designed to be robust and reliable in harsh environments. It is constructed from a stable alloy that is inert to heat and other environmental elements, giving it a long operational life. The innovative design of the EGP50F-E3/54 is also capable of dissipating a large amount of current and it can handle vast amounts of voltage, making it suitable for a wide range of applications. Furthermore, it is also RoHS, UL, and FCC compliant.

Given the capability of the EGP50F-E3/54 rectifier diode, it can be used in a wide range of applications, from consumer electronics to industrial applications. In addition, its features of low forward voltage, low reverse leakage current, fast recovery, and high voltage and current ratings make it especially suitable for CompactPCI, power supplies, and buck converters. Consequently, the EGP50F-E3/54 can be used to provide improved efficiency and reduce power dissipation.

The specific data is subject to PDF, and the above content is for reference

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