EGP50FHE3/73 Allicdata Electronics
Allicdata Part #:

EGP50FHE3/73-ND

Manufacturer Part#:

EGP50FHE3/73

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Semiconductor Diodes Division
Short Description: DIODE GEN PURP 300V 5A GP20
More Detail: Diode Standard 300V 5A Through Hole GP20
DataSheet: EGP50FHE3/73 datasheetEGP50FHE3/73 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: SUPERECTIFIER®
Packaging: Tape & Box (TB) 
Part Status: Obsolete
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 300V
Current - Average Rectified (Io): 5A
Voltage - Forward (Vf) (Max) @ If: 1.25V @ 5A
Speed: Fast Recovery = 200mA (Io)
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 5µA @ 300V
Capacitance @ Vr, F: 75pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-201AA, DO-27, Axial
Supplier Device Package: GP20
Operating Temperature - Junction: -65°C ~ 150°C
Base Part Number: EGP50F
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Diodes-Rectifiers-Single is a type of electronic component that is used in many different applications where it is necessary to regulate and control the flow of electric current in a circuit. The EGP50FHE3/73 is a single diode component that is useful in a variety of applications. It is based on a technology known as the insulated-gate bipolar transistor, which has the ability to both turn current on and off.

The most common application of the EGP50FHE3/73 is in the field of power electronics. In order for electric current to move through the component it must pass through a diode. The diode is a semiconductor device that allows current in one direction but prevents it from flowing in the opposite direction. By controlling the direction of the current, the component can be used to regulate the amount of power available to a circuit.

The component can also be used in the field of signal processing applications. The component has a high level of reverse leakage current and a low forward voltage drop, making it ideal for use in applications such as switching and regulating currents. In signal processing applications, the component can be used to amplify signals or to provide signal isolation.

The component also has a wide range of temperature capabilities, which makes it suitable for use in a variety of operating environments. The component can be used in both high and low temperatures, and can handle temperatures up to +85°C. This makes the component ideal for use in a variety of commercial, industrial, and medical applications.

The working principle of the EGP50FHE3/73 is based upon the insulated-gate bipolar transistor, or IGBT. This is a type of semiconductor device that functions by controlling the voltage and current flow through a channel formed between two electrodes. This technology is used to create a controlled and regulated flow of electric current in a circuit.

The component works by using two transistors, one P-channel and one N-channel, to control the current flow. One of the transistors is always in the on-state and the other is always in the off-state. When the voltage is higher than a certain threshold, the P-channel transistor will turn on and the N-channel transistor will turn off. This will allow current to flow in the desired direction. When the voltage is lower than the threshold, the opposite will happen and the current will flow in the opposite direction.

The EGP50FHE3/73 is ideal for use in a variety of applications in the field of power electronics and signal processing. Its wide temperature range, low leakage current, and its ability to control electric current makes it suitable for applications where a regulated and controlled current is required. The component works based on the insulated-gate bipolar transistor technology and can be used to provide controlled and efficient current flow.

The specific data is subject to PDF, and the above content is for reference

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