EGP50F-E3/73 Allicdata Electronics
Allicdata Part #:

EGP50F-E3/73-ND

Manufacturer Part#:

EGP50F-E3/73

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Semiconductor Diodes Division
Short Description: DIODE GEN PURP 300V 5A GP20
More Detail: Diode Standard 300V 5A Through Hole GP20
DataSheet: EGP50F-E3/73 datasheetEGP50F-E3/73 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: SUPERECTIFIER®
Packaging: Tape & Box (TB) 
Part Status: Obsolete
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 300V
Current - Average Rectified (Io): 5A
Voltage - Forward (Vf) (Max) @ If: 1.25V @ 5A
Speed: Fast Recovery = 200mA (Io)
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 5µA @ 300V
Capacitance @ Vr, F: 75pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-201AA, DO-27, Axial
Supplier Device Package: GP20
Operating Temperature - Junction: -65°C ~ 150°C
Base Part Number: EGP50F
Description

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A good understanding of the application field and working principle of a EGP50F-E3/73 diode rectifier is essential for engineers in many applications. This diode rectifier is composed of a forward-biased PN-junction diode, as opposed to a reverse-biased diode connected in parallel with an inductor. This device is a unique combination of rectifier and storage element, providing outstanding performance and reliability.

The EGP50F-E3/73 is a preferred choice for rectifying power supplies and digital power applications due to its low forward voltage drop and low reverse current leakage capability. It can also be used in automotive applications, such as battery protection and voltage stabilizing circuits.

The EGP50F-E3/73’s working principle involves forming a series of metal-oxide-semiconductor (MOS) junctions that function in parallel as a single device. A MOSFET is a type of transistor that is controlled by the gate voltage and the drain current. The EGP50F-E3/73 utilizes this type of device as the rectifying element. This is done by applying a voltage to the gate of the MOSFET and meeting the source voltage to the drain voltage. The current flow between the source and drain is then controlled by the gate voltage. When the gate voltage is low, the current will not flow, thus the diode rectifier is reverse polarity. When the gate voltage is increased, the current will flow, thus the polarity of the rectifier is forward.

The EGP50F-E3/73 also features low thermal resistance and high surge current capability. This means that the device can handle higher temperatures and higher levels of power without sacrificing performance. The device has self-protection against too much current, allowing designers to use a higher rating of the same device without fear of overloading the circuit. This effectively eliminates the need for having to manually set the operating temperature.

Another benefit of the EGP50F-E3/73 is its fast response time. Its fast switching speed makes it an excellent choice for applications that require efficient power conversion, such as switching power supplies or digital signal processing.

Overall, the EGP50F-E3/73 diode rectifier is an excellent choice for applications requiring a reliable, high-performance device. It offers a unique combination of rectifier and storage element, providing superior performance and reliability. Its low forward voltage drop, low reverse current leakage, and self-protection from overcurrent provides a reliable and efficient device for many applications.

The specific data is subject to PDF, and the above content is for reference

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