
Allicdata Part #: | EGP51G-E3/D-ND |
Manufacturer Part#: |
EGP51G-E3/D |
Price: | $ 0.28 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE GEN PURP 400V 5A DO201AD |
More Detail: | Diode Standard 400V 5A Through Hole DO-201AD |
DataSheet: | ![]() |
Quantity: | 1000 |
4000 +: | $ 0.25005 |
Series: | SUPERECTIFIER® |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 400V |
Current - Average Rectified (Io): | 5A |
Voltage - Forward (Vf) (Max) @ If: | 1.25V @ 5A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 50ns |
Current - Reverse Leakage @ Vr: | 5µA @ 400V |
Capacitance @ Vr, F: | 48pF @ 4V, 1MHz |
Mounting Type: | Through Hole |
Package / Case: | DO-201AD, Axial |
Supplier Device Package: | DO-201AD |
Operating Temperature - Junction: | -65°C ~ 175°C |
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The EGP51G-E3/D is a single diode rectifier. It is a general-purpose semiconductor device which can be used within a range of different electrical circuits to convert AC or pulsating DC input into a DC output. Generally, rectifiers can be divided into a variety of categories and the EGP51G-E3/D is classified as a single diode rectifier.
Single diode rectifiers, as the name suggests, comprise of a single diode and a connective circuit which, when energized, produces a unidirectional current. Diodes are semiconductor elements which, depending on the nature of the polarity of the applied voltage, either conduct or block current. When the polarity of the voltage is in the forward direction, the diode allows current to pass through it, known as forward bias. However, when the polarity of the voltage is reversed, the diode blocks current flow, known as reverse bias.
The EGP51G-E3/D is an example of a single diode rectifier. It is a 6.4A, 200V, silicon rectifier diode designed for general purpose rectification, the most common example being the full-wave bridge rectifier. Its peak forward surge current, IFSM, is 40A. Its capacitance, C, is 245pF. It is designed to have a maximum reverse voltage, VR (rated) , of 200V. The reverse recovery time of the EGP51G-E3/D is given as tR (typical) and has a value of 6ns.
A full-wave bridge rectifier circuitry consists of four diodes connected between two of the AC supply lines, known as the anode and cathode, and the other two AC lines connected to the output. In such a circuit, the diodes are arranged such that when any two of the diodes are forward biased, the others become reverse biased, thus creating a bridge junction between the anode and cathode and allowing current to flow.
In practice, the EGP51G-E3/D single diode rectifier is most commonly used in applications where full-wave rectification is required. Examples of such applications would be power supplies, voltage regulators and inverters. Additionally, such devices can also be used to limit the voltage applied to components and circuits, and in protecting circuits from overvoltage.
The EGP51G-E3/D single diode rectifier is a useful semiconductor device with many applications. Its main function is to convert AC or pulsating DC input into a DC output which can then be used in various electrical circuits. This device can be used in voltage regulators, inverters and power supplies, as well as in protecting circuits from overvoltage. All of this makes this device an essential component in a wide range of electrical applications.
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Part Number | Manufacturer | Price | Quantity | Description |
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EGP51C-E3/D | Vishay Semic... | 0.28 $ | 1000 | DIODE GEN PURP 150V 5A DO... |
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EGP50DHE3/54 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 200V 5A GP... |
EGP50A-E3/54 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 50V 5A GP2... |
EGP50GHE3/54 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 400V 5A GP... |
EGP51F-E3/D | Vishay Semic... | 0.28 $ | 1000 | DIODE GEN PURP 300V 5A DO... |
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EGP50B-E3/73 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 100V 5A GP... |
EGP50D-E3/73 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 200V 5A GP... |
EGP51D-E3/C | Vishay Semic... | 0.28 $ | 1000 | DIODE GEN PURP 200V 5A DO... |
EGP51G-E3/C | Vishay Semic... | 0.34 $ | 1000 | DIODE GEN PURP 400V 5A DO... |
EGP50FHE3/73 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 300V 5A GP... |
EGP50CHE3/54 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 150V 5A GP... |
EGP50FHE3/54 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 300V 5A GP... |
EGP51G-E3/D | Vishay Semic... | 0.28 $ | 1000 | DIODE GEN PURP 400V 5A DO... |
EGP51A-E3/D | Vishay Semic... | 0.28 $ | 1000 | DIODE GEN PURP 50V 5A DO2... |
EGP51F-E3/C | Vishay Semic... | 0.28 $ | 1000 | DIODE GEN PURP 300V 5A DO... |
EGP50GHE3/73 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 400V 5A GP... |
EGP50C-E3/54 | Vishay Semic... | -- | 1000 | DIODE GEN PURP 150V 5A GP... |
EGP50B-E3/54 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 100V 5A GP... |
EGP50G-E3/73 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 400V 5A GP... |
EGP51B-E3/D | Vishay Semic... | 0.28 $ | 1000 | DIODE GEN PURP 100V 5A DO... |
EGP50D-E3/54 | Vishay Semic... | -- | 1000 | DIODE GEN PURP 200V 5A GP... |
EGP51B-E3/C | Vishay Semic... | 0.28 $ | 1000 | DIODE GEN PURP 100V 5A DO... |
EGP50G-E3/54 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 400V 5A GP... |
EGP51A-E3/C | Vishay Semic... | 0.28 $ | 1000 | DIODE GEN PURP 50V 5A DO2... |
EGP50AHE3/54 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 50V 5A GP2... |
EGP50BHE3/54 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 100V 5A GP... |
EGP50F-E3/73 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 300V 5A GP... |
EGP50C-E3/73 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 150V 5A GP... |
EGP50A-E3/73 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 50V 5A GP2... |
EGP50BHE3/73 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 100V 5A GP... |
EGP50AHE3/73 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 50V 5A GP2... |
EGP50CHE3/73 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 150V 5A GP... |
EGP50GL-6630E3/72 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURPOSE GP20Dio... |
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