EL7212CNZ

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The EL7212CNZ is an integrated gate driver for high power GaN FETs from PMIC - Gate Drivers. It features a dual capable arched gate driver to maximize performance and minimize switching losses. It also includes integrated current sensing and an adjustable soft turn off timer for system protection.

The EL7212CNZ supports both standard N-channel power field effect transistors and next-generation GaN (Gallium Nitride) FETs. Featuring an integrated arched gate driver, the EL7212CNZ provides up to 4A of maximum gate drive current and 16ns of minimum rise/fall. This makes it ideal for high-power applications and high-speed switching.

The EL7212CNZ is designed to provide superior EMI performance due to its integrated arched gate driver architecture. The integrated arched gate driver is designed to reduce charge injection into the gate and minimize radiated EMI. This significantly helps reduce switching losses and lowers input filter and printed circuit board area requirements.

The EL7212CNZ also integrates embedded current sensing, making it suitable for applications requiring precise current control. Additionally, the integrated soft turn-off timer helps protect a system from ringing by gradually reducing gate drive current over a pre-determined time. This increases the life of the system and prevents short circuits.

In terms of applications, the EL7212CNZ is ideal for a variety of high-power systems including servers, AC inverters, DC/DC converters, solid-state drives, and other applications. With its high maximum gate drive current and integrated solutions, the EL7212CNZ can offer high efficiency and improved system performance.

In summary, the EL7212CNZ is an ideal solution for high power applications requiring robust EMI performance and precise current control. With its integrated solutions, the EL7212CNZ can offer high efficiency and improved system performance.

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