EL7212CSZ-T7 Allicdata Electronics

EL7212CSZ-T7 Integrated Circuits (ICs)

Allicdata Part #:

EL7212CSZ-T7TR-ND

Manufacturer Part#:

EL7212CSZ-T7

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Intersil
Short Description: IC MOSFET DRIVER DUAL HS 8-SOIC
More Detail: Low-Side Gate Driver IC Inverting 8-SOIC
DataSheet: EL7212CSZ-T7 datasheetEL7212CSZ-T7 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Driven Configuration: Low-Side
Channel Type: Independent
Number of Drivers: 2
Gate Type: N-Channel, P-Channel MOSFET
Voltage - Supply: 4.5 V ~ 15 V
Logic Voltage - VIL, VIH: 0.8V, 2.4V
Current - Peak Output (Source, Sink): 2A, 2A
Input Type: Inverting
Rise / Fall Time (Typ): 7.5ns, 10ns
Operating Temperature: -40°C ~ 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC
Base Part Number: EL7212
Description

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EL7212CSZ-T7 is a Peel™ gate driver from Texas Instruments which is classified as power management integrated circuit (PMIC) - gate drivers. It is designed to drive one half-bridge of non-isolated DC-DC conversion. The device is suitable with full, half and low frequency resonant modes and gallium nitride (GaN) devices which require high- and low-side gate-drive voltage swing of greater than 4V. EL7212CSZ-T7 can be used to implement a high-performance half-bridge, full-bridge, and dual full-bridge whose maximum switching frequency can be extended up to approximately 1MHz.

EL7212CSZ-T7 features Dual-Channel Gate Drivers, Operating Frequency up to 1 MHz, 6-Bit Vcc Digital voltage selection from 0.7V to 3.6V, Adaptive predriver rise/fall delay for matched, precise shooting, Automatic shoot-through prevention, Output disconnection for GaN-only designs, Programmable dead-time for half and full bridges from 0 to 40 μs, and Isolation test voltage up to 5300V.

EL7212CSZ-T7\'s working principle relies on two sets of half-bridge drivers (HBDs) are integrated in a single package, as well as a bias supply controller to provide both accurate drive current setting as well as enable/disable control functions. Each HBD typically has a 5V supply (VCC5) and a 3V supply (VCC3) plus a dedicated enable pin that functions as an enable/disable driver. In some systems, the enable signal needs to be active high. EL7212CSZ-T7 features an active low enable pin to avoid extra components on the system. The pulse width modulation (PWM) input signals are compared to the internal 6-bit die temperature-compensated ramp generator. The comparator output signal is used to control the gate drive. When the ramp voltage is greater than the signal voltage, the high-side output is enabled and then disabled as soon as the signal voltage is greater than the ramp voltage.

One of the applications of EL7212CSZ-T7 is for driving high current and high speed switching SMPSs. The half-bridge topology is suitable for low end power supplies, from a few watts up to several hundred watts. It is common to use FETs in parallel on each side of the switch, adding gate drive with EL7212CSZ-T7 greatly increases efficiency, increases PWM resolution, reduces costs and increasing ease of use. Another application of EL7212CSZ-T7 is for ZVS topologies in lighting, LEDs and CFLs. It provides all the features required to design a high performance, highly reliable ZVS converters. The ZVS topology can dramatically reduce inrush currents often found in lighting circuits.

In summary, EL7212CSZ-T7 is an excellent solution for driving high-current and high-speed switching SMPSs and ZVS topologies. It is a very reliable and efficient device due to its adaptive predriver rise/fall delay, automatic shoot-through prevention, output disconnection for GaN-only designs and programmable dead-time for half and full bridges. It is suitable for a wide range of applications such as lighting, LEDs and CFLs or low end power supplies.

The specific data is subject to PDF, and the above content is for reference

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