EL7212CS-T7

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The EL7212CS-T7 is a compact and advanced gate driver integrated circuit that offers improved control of power MOSFETs and IGBTs in various power electronic applications. This integrated circuit is ideal for motor drives, inverters, and advanced automotive applications. It is a unidirectional gate drive IC, meaning it can only drive integrated power MOSFETs and IGBTs in a single direction. The output of the EL7212CS-T7 can be programmed to operate in low side, high side, and half bridge output configurations, making it highly versatile and compatible with a wide range of devices.

The key features of the EL7212CS-T7 include a wide operating voltage range of 5.5V to 30V, a current capability of up to 1.2A, and a low quiescent supply current of only 2mA. It also has a programmable turn-on speed that can be adjusted from 0.5μs to 2μs, and an adjustable dead-time setting from 0.5 μs to 4μs. Additionally, its integrated PWM control logic allows for a programmable slew rate of up to 1.5A per microsecond. This integrated gate driver offers excellent thermal performance and is protected against short circuits, over-temperature and under-voltage events.

The EL7212CS-T7 is designed to drive a wide variety of power MOSFETs and IGBTs with low-side, high-side, and half-bridge configurations. It incorporates two independent amplifier stages for each output, as well as a PWM control logic block. The output stages feature a series of current-limiting tunnel diodes and integrated gate drive current sources to ensure precise control of the MOSFET/IGBT gate voltage and current. The integrated PWM control logic ensures accurate logic level timing, dynamic slew rate control, and thermal protection.

The working principle of the EL7212CS-T7 is based on the integrated series of current-limiting tunnel diodes which limit the voltage and current on the gates of the power MOSFETs and IGBTs. The integrated PWM control logic block is responsible for controlling the voltage and current levels of the gates to ensure precise timing and dynamic slew rate control. In addition, the EL7212CS-T7 also has an integrated thermal protection circuit that prevents the power MOSFETs and IGBTs from overheating. The thermal protection circuit limits the output current of the device, preventing damage to the internal circuitry of the power MOSFETs and IGBTs.

The EL7212CS-T7 is a versatile and high-performance gate driver IC and is capable of driving a wide variety of power MOSFETs and IGBTs with low-side, high-side, or half-bridge configurations. The integrated current limiting tunnel diodes, PWM control logic block, and thermal protection circuit ensure precise control of the power devices, eliminating the need for external protection measures. This gate driver IC is suitable for use in various power electronic applications such as motor drives, inverters, and advanced automotive applications.

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