Allicdata Part #: | EMH2308-TL-H-ND |
Manufacturer Part#: |
EMH2308-TL-H |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET 2P-CH 20V 3A EMH8 |
More Detail: | Mosfet Array 2 P-Channel (Dual) 20V 3A 1W Surface ... |
DataSheet: | EMH2308-TL-H Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Last Time Buy |
FET Type: | 2 P-Channel (Dual) |
FET Feature: | Logic Level Gate, 1.8V Drive |
Drain to Source Voltage (Vdss): | 20V |
Current - Continuous Drain (Id) @ 25°C: | 3A |
Rds On (Max) @ Id, Vgs: | 85 mOhm @ 3A, 4.5V |
Vgs(th) (Max) @ Id: | -- |
Gate Charge (Qg) (Max) @ Vgs: | 4nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: | 320pF @ 10V |
Power - Max: | 1W |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 8-SMD, Flat Lead |
Supplier Device Package: | 8-EMH |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
EMH2308-TL-H is an array transistor enclosure made by TO-220FM standard. The device’s packaging contains a single line of four N-channel enhancement mode Field Effect Transistors (FETs). These FETs possess high input impedance, high operating temperature and channel to channel isolation. Generally, EMH2308-TL-H works as a switch between Protection and Equipments circuit.
EMH2308-TL-H’s applications include power management, motor drive, PC system power supply, DC/DC converter, LED lighting, charging and discharging and other related applications. Apart from that, the product has a wide working temperature range from -55°C to +150°C, making it suitable for long-term power supply. In terms of mechanical strength and durability, the device’s enclosure is made from strong plastic with good resistance to heat, shock.
The device’s working principle is based on the principles of field effect transistors. It primarily consists of a source and gate electrode, a gate oxide and a drain electrode. The gate oxide acts as a barrier to electrons and prevents them from passing through the drain and source electrodes when the gate electrode is off. When the gate electrode is turned on, the electrical field created by the gate electrode attracts the electrons to pass through the drain and source electrodes. This phenomenon is known as “enhancement mode” because the current can be increased while the voltage remains constant.
In order to control the transistor’s operation, it needs to be properly connected to the other components. The device pocesses two types of input and output circuits, AC and DC. In the AC circuit, both the source and the gate are connected to AC power supply, while the drain is connected to ground. In the DC circuit, the source is connected to DC power supply and the gate is connected to an input signal. The drain is again connected to ground.
EMH2308-TL-H is capable of controlling the current flowing between two different equipments and also provides a protection circuit against high voltage. The device is suitable for all kinds of applications requiring high operating temperature, high input impedance and channel to channel isolation.
The specific data is subject to PDF, and the above content is for reference
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