EMH25FHAT2R

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The EMH25FHAT2R type of transistor is a multi-channel transistor array built with a common emitter pre-bias configuration. It is designed for use in high frequency power amplifiers, radio frequency (RF) applications, frequency synthesizers, charge pumps, etc. It provides a wide range of gain and current gain over very small temperatures. The EMH25FHAT2R is also available in surface mount technology for use in a variety of medical, industrial and consumer applications.

The EMH25FHAT2R is built using bipolar junction technology (BJT). The pre-bias is configured from a common emitter. The transistor is composed of thirteen pairs of NPN and PNP transistors, one pair per channel. The device is a low power, high impedance transistor which is ideal for use in high frequency analogue and digital logic circuits including clock drivers, Schmitt triggers, pulse width modulators, phase locked loops, etc.

The EMH25FHAT2R is an array of transistors wherein each pair of transistors is pre-biased. This pre-bias ensures that the transistors are completely isolated from each other, resulting in greater stability and better operation. The BJT array also includes an integrated current source, which helps set the power level of the device, and a voltage regulator, which is used to precisely control the voltage along the channel.

The EMH25FHAT2R is designed for a wide range of functions, with excellent performance. The device is capable of providing high voltage and current gain, low noise, high slew rate and excellent linearity. The pre-biased array also allows for maximum control over the operating bias point.

The EMH25FHAT2R is designed for use in a wide range of environments, with excellent reliability and performance. The device is suitable for operation in extreme temperature ranges, high humidity and dusty conditions. The EMH25FHAT2R is also compatible with a variety of MCUs and other embedded systems, making it the perfect choice for industrial and consumer applications.

In summary, the EMH25FHAT2R is a pre-biased multi-channel transistor array built with bipolar junction technology. It is ideal for use in RF applications, frequency synthesizers and high frequency analogue/digital logic circuits. The device provides a wide range of gain and current gain over small temperatures, excellent performance and reliability, and is well suited for industrial, consumer and medical applications.

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