EMH2417R-TL-H Allicdata Electronics
Allicdata Part #:

EMH2417R-TL-H-ND

Manufacturer Part#:

EMH2417R-TL-H

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET 2N-CH 12V 11A EMH8
More Detail: Mosfet Array 2 N-Channel (Dual) Common Drain 12V 1...
DataSheet: EMH2417R-TL-H datasheetEMH2417R-TL-H Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Last Time Buy
FET Type: 2 N-Channel (Dual) Common Drain
FET Feature: Logic Level Gate, 2.5V Drive
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 11A
Rds On (Max) @ Id, Vgs: 10 mOhm @ 5A, 4.5V
Vgs(th) (Max) @ Id: 1.3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: --
Power - Max: 1.3W
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Supplier Device Package: SOT-383FL, EMH8
Description

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The EMH2417R-TL-H is a type of transistor array, which incorporates a combination of field-effect transistors (FETs) and metal-oxide-semiconductor field-effect transistors (MOSFETs). These transistors are connected in a parallel or series configuration, allowing for a range of application fields. The EMH2417R-TL-H is primarily used in automotive electronics, consumer electronics, and computing applications.

The EMH2417R-TL-H features a range of features which expand its utility. This includes a low on-resistance (RDSon) of 40-50mΩ in a 5V gate circuit, low turn-on time of 10-15ns, and an improved robustness in temperature cycling. Furthermore, the EMH2417R-TL-H has a gate threshold voltage of 4V, making it an ideal choice for applications with heavy load changes.

The working principle of the EMH2417R-TL-H is rather simple. The device works by using an internal junction field-effect transistor (JFET) and an external gate structure. When a voltage is applied to the gate, the electrons in the FET flow from the source to the drain. This causes a current to flow through the transistor and is then passed through the circuit, allowing it to be used for various applications.

Due to its low conduction resistance and fast switching time, the EMH2417R-TL-H is an ideal choice for automotive, consumer electronics, and computing applications. The device is also resistant to over-voltage conditions, making it a usable choice for high-reliability systems in harsh environments. In addition, the device is capable of running on very low power, making it an energy-efficient solution.

In summary, the EMH2417R-TL-H is a transistor array that is mostly used in automotive, consumer electronics and computing applications due to its low conduction resistance, fast switching time, and robustness to temperature cycling. The device is capable of running on very low power and is also resistant to over-voltage conditions, making it an ideal choice for applications requiring high reliability. Furthermore, its working principle is rather simple, consisting of a gate structure and an internal junction FET. With its range of features, the EMH2417R-TL-H is a suitable choice for a range of electronics applications.

The specific data is subject to PDF, and the above content is for reference

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