Allicdata Part #: | EMH2801-TL-H-ND |
Manufacturer Part#: |
EMH2801-TL-H |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET P-CH 20V 3A EMH8 |
More Detail: | P-Channel 20V 3A (Ta) 1W (Ta) Surface Mount 8-EMH |
DataSheet: | EMH2801-TL-H Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | P-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 20V |
Current - Continuous Drain (Id) @ 25°C: | 3A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 1.8V, 4.5V |
Rds On (Max) @ Id, Vgs: | 85 mOhm @ 1.5A, 4.5V |
Vgs(th) (Max) @ Id: | -- |
Gate Charge (Qg) (Max) @ Vgs: | 4nC @ 4.5V |
Vgs (Max): | ±10V |
Input Capacitance (Ciss) (Max) @ Vds: | 320pF @ 10V |
FET Feature: | Schottky Diode (Isolated) |
Power Dissipation (Max): | 1W (Ta) |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | 8-EMH |
Package / Case: | 8-SMD, Flat Lead |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The EMH2801-TL-H is an enhancement-mode MOSFET (metal oxide semiconductor field effect transistor) made with high voltage (HV), low on-resistance (R-DS(on)) and low gate charge materials. Its application fields cover both linear and switched mode power supplies, where high performance and low loss are of paramount importance.
The EMH2801-TL-H has been developed on the basis of advanced vertical DMOS (V-DMOS) technology to provide superior switching features, such as low on-resistance and reduced gate-charge compared to similar components. Furthermore, the device also features low VGS (gate threshold voltage) and ESL (equivalent series inductance) which combine to provide low turn-on and turn-off times, and lower noise. All this makes the EMH2801-TL-H ideal for high frequency and high efficiency operations, such as synchronous rectification, soft starting and inrush current limitation.
The EMH2801-TL-H is also used in motor drive applications, as it reduces power loss in the power switches which in turn improves the efficiency of the drive system. The component is also used in DC-DC converters, high speed power management, lighting control, telecom and industrial automation systems.
The EMH2801-TL-H works based on the principles of an enhancement-mode MOSFET. It uses the electrostatic force between the gate and source to alter the conductivity of the drain to source channel. When the voltage between the gate and source reaches its threshold voltage (VGS (th)), the MOSFET switches from a high resistance "off-state" to a low resistance "on-state". The gate voltage also determines the turn-on and turn-off times, with a lower gate voltage leading to faster switching times.
The EMH2801-TL-H is protected from static electricity, by having its gate and source pins connected to the back plate. This prevents the MOSFET from inadvertently conducting. It is also protected from thermal runaway, by employing a negative temperature coefficient (NTC) which reduces the gate-to-source voltage, turning the device off when it reaches a specific temperature.
The specific data is subject to PDF, and the above content is for reference
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