EMH2418R-TL-H Discrete Semiconductor Products

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The EMH2418R-TL-H is a high-performance silicon N-channel MOSFET (Metal-Oxide Semiconductor Field-Effect Transistor) array from Eaglerise Electrical Company. This MOSFET is designed for circuit applications that require low ON resistance and high switching current, such as switching power supply, motor drives and UPSs. With its advanced technical features, the EMH2418R-TL-H is ideal for a wide range of applications.

The EMH2418R-TL-H is a three-ended MOSFET array, consisting of three vertical-gate N-channel MOSFETs with a total drain current of 18A. Each MOSFET features a maximum gate-drain voltage of 40V, a source-drain voltage of 40V and an ON resistance (Rdson) of 8mΩ. When the array is enabled, the voltage of the gate and drain is connected to the source. This allows the current to be switched on or off, by controlling the voltage of the gate and drain.

The EMH2418R-TL-H has many benefits, such as low threshold voltage and low input/output capacitance. Its low threshold voltage allows for a smaller gate size, which can help reduce power loss, while its low input/output capacitance helps reduce switching time and reduce the stress on connected components. Additionally, the MOSFET array uses an advanced thermal design, which helps reduce heat production, making it ideal for applications with high switching currents.

The EMH2418R-TL-H is an outstanding solution for a wide range of applications including high-density digital power conversion, inverters, motor drives, demodulators, and digital-to-analog converters. It can also be used in portable electronic applications and embedded systems. Such applications must have higher component densities and lower board cost, so the EMH2418R-TL-H is a perfect choice.

The working principle of the EMH2418R-TL-H MOSFET array is the same as that of other MOSFETs. The gate is connected to a supply voltage, and a control voltage is applied to the gate to control the conductivity of the drain. When the gate voltage is higher than the threshold voltage, the MOSFET will be in the ON state and the current will flow between the drain and the source. When the gate voltage is lower than the threshold voltage, the MOSFET will be in the OFF state and the current will stop flowing. By using this principle, the EMH2418R-TL-H can be used to switch current in various applications.

The EMH2418R-TL-H is an ideal solution for a wide range of applications that require low Rdson and high switching current. With its advanced thermal design, low input/output capacitance, and low threshold voltage, the EMH2418R-TL-H is a perfect choice for many high-efficiency application fields. It is also a great choice for embedded systems and other portable electronic applications. In summary, the EMH2418R-TL-H offers excellent performance, reliability, and durability in its applications.

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