ES6U3T2CR Allicdata Electronics
Allicdata Part #:

ES6U3T2CRTR-ND

Manufacturer Part#:

ES6U3T2CR

Price: $ 0.16
Product Category:

Discrete Semiconductor Products

Manufacturer: ROHM Semiconductor
Short Description: MOSFET N-CH 30V 1.4A WEMT6
More Detail: N-Channel 30V 1.4A (Ta) 700mW (Ta) Surface Mount 6...
DataSheet: ES6U3T2CR datasheetES6U3T2CR Datasheet/PDF
Quantity: 1000
8000 +: $ 0.14182
Stock 1000Can Ship Immediately
$ 0.16
Specifications
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Package / Case: SOT-563, SOT-666
Supplier Device Package: 6-WEMT
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Power Dissipation (Max): 700mW (Ta)
FET Feature: Schottky Diode (Isolated)
Input Capacitance (Ciss) (Max) @ Vds: 70pF @ 10V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 5V
Series: --
Rds On (Max) @ Id, Vgs: 240 mOhm @ 1.4A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Not For New Designs
Packaging: Tape & Reel (TR) 
Description

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ES6U3T2CR Application Field and Working Principle

ES6U3T2CR is one type of transistor device, which falls into the category of field effect transistors (FETs) and metal-oxide-semiconductor field-effect transistors (MOSFETs), single. It is used in many applications from audio amplifiers and computer chips to telecommunications and other consumer electronics.

A field effect transistor is a type of transistor that uses an electrostatic field to control the amount of current running through it. This kind of transistor is used in many electronic applications, such as integrated circuits, sensors, and electrical switches. The FETs and MOSFETs are different types of Field Effect Transistors. FETs have a gate terminal, which is typically a metal contact on the top of the transistor. This physical contact is used to control the electrical current running through the transistor.

MOSFETs, on the other hand, don\'t use physical contact to control the current, but instead use an electric field to control the current. This type of transistor is ideal for applications requiring high input and output impedance such as audio amplifiers, high end audio equipment, and power applications such as variable speed motor control. MOSFETs also offer superior speed of operation and low power consumption compared to other Field Effect Transistors.

The ES6U3T2CR is a single-gate MOSFET, which is widely used in the audio equipment industry. It is a short-length device with a gate length of 4.5µm. This length makes it suitable for use in high-linearity applications, as well as high-frequency audio amplifiers. The device has a drain-source breakdown voltage of 30V and a gate-source breakdown voltage of 13V. It has a maximum drain current of 30A and a gate threshold voltage of 0.77V.

In terms of operation, the ES6U3T2CR works using the principle of capacitance. When a gate voltage is applied to the transistor, an electric field is created around it, which attracts charge carriers from the source to the drain. As these charges accumulate, the capacitance increases and the current flowing through the transistor increases, allowing more current to flow into the drain. At the same time, the gate voltage is used to control the amount of current that flows through the transistor, allowing precise control over the output of the transistor.

In conclusion, the ES6U3T2CR is a single-gate MOSFET, which can be used in many different applications, such as audio amplifiers, high end audio equipment, and power applications such as variable speed motor control. It is a short-length and high-linearity device, and has a maximum drain current of 30A and a gate threshold voltage of 0.77V. It works using the principle of capacitance, and is used to control the amount of current flowing through the transistor, allowing precise control over the output of the transistor.

The specific data is subject to PDF, and the above content is for reference

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