ES6U42T2R

Vgs(th) (Max) @ Id:	2V @ 1mA
Package / Case:	SOT-563, SOT-666
Supplier Device Package:	6-WEMT
Mounting Type:	Surface Mount
Operating Temperature:	150°C (TJ)
Power Dissipation (Max):	700mW (Ta)
FET Feature:	Schottky Diode (Body)
Input Capacitance (Ciss) (Max) @ Vds:	150pF @ 10V
Vgs (Max):	±12V
Gate Charge (Qg) (Max) @ Vgs:	2.1nC @ 4.5V
Series:	--
Rds On (Max) @ Id, Vgs:	390 mOhm @ 1A, 4.5V
Drive Voltage (Max Rds On, Min Rds On):	2.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C:	1A (Ta)
Drain to Source Voltage (Vdss):	20V
Technology:	MOSFET (Metal Oxide)
FET Type:	P-Channel
Part Status:	Not For New Designs
Packaging:	Tape & Reel (TR)

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The ES6U42T2R is a Single, enhancement-mode, low-voltage MOSFET, perfect for applications where a low on-resistance, low gate charge, and good RDS(on) characteristics are desired. The ES6U42T2R has a wide range of applications in automotive, computer, industrial, and telecommunications markets.

Applications

The ES6U42T2R can be used in a wide range of applications, most commonly as a high-efficiency, low-resistance switch for power management and digital logic control in power systems. In addition, it can be used as a low-resistance path for current flow in high-efficiency power converters, as well as for other high-speed switching applications. More specific applications include DC-DC converters, motor control and instrumentation systems, and motor speed control systems. In addition, it can be used in portable electronic devices that require efficient power management and flexible control.

Functionality

The ES6U42T2R operates by opening and closing a conductive channel between two terminals, resulting in a flow of electric current. The conductive channel, or “gate”, of the ES6U42T2R is activated by applying a voltage to the gate terminal. When a given voltage is applied, the gate will open, allowing current to flow between the source and drain terminals. The ES6U42T2R can also be placed in a “floating” state, where the gate is neither closed nor open, allowing for increased resistance.The ES6U42T2R features a very low on-resistance, making it an efficient switch for high-current applications. The low gate charge reduces the power consumed by the ES6U42T2R when switching, further increasing efficiency for power-sensitive applications. The ES6U42T2R is also very versatile and can be used in a variety of configurations, allowing for custom solutions for a variety of applications.

Mounting

The ES6U42T2R is designed to be mounted on a printed circuit board, or board level mounting. For board level mounting, there are two terminals, the source and the drain, that must be connected to the desired voltage. The gate terminal must be connected to the desired switching control circuit. The ES6U42T2R is also available in a surface-mount package, allowing for direct connection to a printed circuit board or other application.

Considerations

The ES6U42T2R is designed with a low on-resistance to switch high currents, but it has a relatively high threshold voltage and a finite breakdown voltage, so it must be used in the appropriate applications. In addition, the ES6U42T2R has a limited operating temperature range and must be used within this range for proper operation. Also, the gate terminal of the ES6U42T2R must be driven with a low-impedance circuit in order to achieve low turn-on and turn-off times.

In conclusion, the ES6U42T2R is a low-voltage, highly efficient enhancement-mode MOSFET designed to provide low on-resistance, low gate charge, and good RDS(on) characteristics in a wide range of applications. Its low gate charge and high current switching capability make it an ideal choice for power management and digital logic control applications. The ES6U42T2R is available in both board-level and surface-mount packages and is easy to install and use. However, the ES6U42T2R must be used within its specified operating parameters and driven with a low-impedance circuit in order to achieve its desired performance.

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