FCA47N60

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The FCA47N60 is a N-channel enhancement-mode MOSFET designed for switching applications such as DC-DC converters, and Power Factor Correction circuits. It is also suitable for any low-side switch application. The device has both high current and high voltage ratings, making it ideal for power conversion applications.

The device is a 3-Terminal, N-channel enhancement-mode MOSFET with an on-resistance of 230 milliohms (corresponding to a RDSon of 0.23 ohms at 125°C junction temperature). It also has a maximum total gate charge (Qg) of 78 nC and a maximum drain-source on-state resistance of 340 milliohms. It also includes integrated protection diodes.

The FCA47N60 is capable of switching high current at frequencies of up to 20MHz. It provides low ON-resistance and high OFF-resistance, allowing for low voltage drops and low power consumption. It is also designed with an avalanche-rated breakdown voltage of 600V, suitable for applications requiring high voltage switching. The device also features an external gate capacitance of less than 4nF and an off-state leakage current of less than 2µA.

The FCA47N60 application field and working principle can be divided into two parts:

Applications

• DC-DC converters
• Power Factor Correction circuits
• Low-side switching applications
• Switching high currents
• High voltage switching applications
• Lighting control
• Battery management

Working Principle

The FCA47N60 is an N-channel enhancement-mode MOSFET. It is triggered by the voltage on its gate terminal with respect to the source terminal. When the gate-source voltage Vgs is greater than the threshold voltage Vth, the MOSFET is turned “ON”, and the channel between the source and drain terminals is embedded. The electric field between the gate and drain terminals causes current flow from drain to source.

The current flowing through the Drain-Source terminal is called the Drain current (ID). It is controlled by the magnitude of the gate-source voltage (Vgs). As the voltage increases, the Drain current increases. The relation between the Drain current and Vgs is called the Transfer characteristics. It can be used as a basic measure of the MOSFETs conductivity.

Since there are no mechanical parts in the FCA47N60, the switching speed is higher than other similar devices. In addition, the device features an off-state leakage current of less than 2µA making it ideal for low-power applications.

In summary, the FCA47N60 is a high-performance enhancement-mode MOSFET designed for a variety of power electronics applications. The device features a low on-resistance, high off-resistance and integrated protection diodes. It also has an avalanche-rated breakdown voltage of 600V and a maximum drain-source on-state resistance of 340 milliohms. As such, it is suitable for a variety of switching applications, including DC-DC converters, Power Factor Correction circuits, and lighting control.

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