FCD2250N80Z Allicdata Electronics

FCD2250N80Z Discrete Semiconductor Products

Allicdata Part #:

FCD2250N80ZTR-ND

Manufacturer Part#:

FCD2250N80Z

Price: $ 0.44
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 800V 2.6A TO252-3
More Detail: N-Channel 800V 2.6A (Tc) 39W (Tc) Surface Mount D-...
DataSheet: FCD2250N80Z datasheetFCD2250N80Z Datasheet/PDF
Quantity: 1000
2500 +: $ 0.40572
Stock 1000Can Ship Immediately
$ 0.44
Specifications
Vgs(th) (Max) @ Id: 4.5V @ 260µA
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: D-Pak
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 39W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 585pF @ 100V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
Series: SuperFET® II
Rds On (Max) @ Id, Vgs: 2.25 Ohm @ 1.3A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 2.6A (Tc)
Drain to Source Voltage (Vdss): 800V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The FCD2250N80Z is a part of a family of advanced power semiconductor MOSFETs from Dynex Semiconductors. These transistors are beneficial for a variety of power handling and energy efficiencies. They are mainly used for automotive applications such as electronic control units, powertrains, onboard equipment and advanced safety systems. This article will discuss what this transistor is used for and the working principle of the device.

FCD2250N80Z Application Field

FCD2250N80Z transistors are designed to specify and meet higher power requirements. The device has an drain to source current of 650A (continuous) at 25°C. It has a voltage rating of 80 to 100v These transistors are mainly used to switch power, manage voltage, regulate speed and control current in automotive applications. It also provides a good combination of power losses, efficiency, robustness and price. This makes it an appropriate choice for low and medium power applications in automotive systems.

The main applications of the FCD2250N80Z are as follows:

  • Electronic control units: Electronic control units use the FCD2250N80Z transistors to manage and control electronic signals emanating from the vehicle\'s engine. This includes the intake, exhaust, spark and fuel systems.
  • Powertrains: In powertrains, this transistor is used as a switch for controlling and managing the speed of the engine. It is also useful for controlling the fuel injection system and the engine speed.
  • Onboard equipment: Onboard equipment such as safety systems, alarm systems, navigation systems and infotainment systems are powered by the FCD2250N80Z transistors. It allows for efficient and reliable operation of the onboard systems.
  • Advanced safety systems: The FCD2250N80Z transistors are also beneficial for advanced safety systems such as airbag systems and ABS systems. These systems rely on efficient and reliable control and switching of power.

The FCD2250N80Z transistors are mainly used in automotive applications such as electronic control units, powertrains, onboard equipment and advanced safety systems. The device is beneficial for superior power handling and energy efficiency. It provides a good combination of power losses, efficiency, robustness and price.

FCD2250N80Z Working Principle

The FCD2250N80Z transistor is a MOSFET device. It uses a metal oxide semiconductor (MOS) as it’s gate. MOSFETs are power switches which are capable of high-frequency switching and have full isolation between the gate and the drain and source.

The principle of operation of the FCD2250N80Z is relatively simple. When the gate receives a small positive voltage, the MOSFET will allow current to flow between the drain and the source. The transistor is designed so that the voltage between the gate and the source is maintained at a high level, ensuring that the device will switch on and off quickly and efficiently.

The FCD2250N80Z is also known as a ‘depletion-mode-field-effect’ (DEFE) transistor. This type of transistor is unique because the current flow between drain and source is controlled by the voltage applied to the gate. It is used primarily for its low voltage operation, high switching rates and low power consumption.

To summarize, the FCD2250N80Z is an advanced power semiconductor MOSFET transistor designed to manage and control electrical signals in automotive applications. It is a depletion-mode-field-effect transistor that is beneficial for higher power requirements and energy efficiency. The working principle is that when a small positive voltage is applied to the gate, it will allow current to flow between the drain and source. The voltage between gate and source is maintained at a high level, allowing for efficient and reliable switching.

The specific data is subject to PDF, and the above content is for reference

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