Allicdata Part #: | FCD260N65S3-ND |
Manufacturer Part#: |
FCD260N65S3 |
Price: | $ 0.63 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 260MOHM TO252 |
More Detail: | N-Channel 650V 12A (Tc) 90W (Tc) Surface Mount TO-... |
DataSheet: | FCD260N65S3 Datasheet/PDF |
Quantity: | 1000 |
2500 +: | $ 0.56728 |
Gate Charge (Qg) (Max) @ Vgs: | 24nC @ 10V |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | TO-252, (D-Pak) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 90W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1010pF @ 400V |
Vgs (Max): | ±30V |
Series: | SuperFET® III |
Vgs(th) (Max) @ Id: | 4.5V @ 1.2mA |
Rds On (Max) @ Id, Vgs: | 260 mOhm @ 6A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 12A (Tc) |
Drain to Source Voltage (Vdss): | 650V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
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Field-effect transistors (FETs) are one of the most widely used types of transistors due to their exceptional versatility and performance characteristics. FCD260N65S3 is a N-channel enhancement mode power MOSFET which is widely used in the electronic equipment. It is suitable for step-down switch mode power supplies, converters and motor controls applications.
The FCD260N65S3 is a N-channel MOSFET. The N-channel enhancement mode MOSFET works by using a gate voltage as the controlling parameter. When the gate voltage is zero, no electric field is formed, and then the device has a resistance of very high. When the gate voltage is applied, an electric field is produced and the resistance of the channel is reduced. This is because the gate voltage changes the electrostatic force of the MOSFET. The higher gate voltage produces a greater electrostatic force and thus, the channel resistance is decreased. The FCD260N65S3 can be operated with voltages as low as 4 volts.
The FCD260N65S3 is widely used in consumer electronics, such as laptop computers and cell phones, due to its low on-resistance and low gate charge. The FCD260N65S3 is a efficient switch due to its combination of low on-resistance and minimal gate charge. This allows it to be used in applications that require efficient switching of high currents. The FCD260N65S3 also has a fast switching speed, which makes it well suited for high speed switching applications, such as motor control and switching power converters. The FCD260N65S3 also has a very low response time, making it suited for applications with high frequency switching.
The FCD260N65S3 has a drain-source drain voltage (VDS) of 650V and a drain-source on-state resistance (RDS(on)) of 0.013ohms. The FCD260N65S3 is rated at 16A, which makes it suitable for applications that require high current switching capabilities. The maximum power dissipation of this device is 256W, which makes it suitable for high power applications, such as automotive and industrial applications.
The FCD260N65S3 is a power MOSFET and is used in higher power levels in a wide variety of applications. It is used in switchmode power supplies, inverters, motor controls and other power applications. It is suitable for a wide range of applications due to its low on-resistance, fast switching speed and low gate charge. The FCD260N65S3 is an efficient switching device suitable for high current applications and high frequency switching. The FCD260N65S3 is a reliable and robust device which is suited for a wide range of demanding applications.
The specific data is subject to PDF, and the above content is for reference
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