
FCMT199N60 Discrete Semiconductor Products |
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Allicdata Part #: | FCMT199N60TR-ND |
Manufacturer Part#: |
FCMT199N60 |
Price: | $ 1.59 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 600V 20.2A POWER88 |
More Detail: | N-Channel 600V 20.2A (Tc) 208W (Tc) Surface Mount ... |
DataSheet: | ![]() |
Quantity: | 3000 |
3000 +: | $ 1.44538 |
Vgs(th) (Max) @ Id: | 3.5V @ 250µA |
Package / Case: | 4-PowerTSFN |
Supplier Device Package: | Power88 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 208W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2950pF @ 100V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 74nC @ 10V |
Series: | SuperFET® II |
Rds On (Max) @ Id, Vgs: | 199 mOhm @ 10A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 20.2A (Tc) |
Drain to Source Voltage (Vdss): | 600V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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Different types of transistors, such as FETs, MOSFETs and Single, can be depended on for various applications. One such type of transistor is the FCMT199N60 which possesses the flexibility of both FETs and MOSFETs. As a switching device, the N Channel Enhancement Type FET (FCMT199N60) is predominantly used for the purpose of controlling and switching electronic signals. It is a special type of power transistor which has an incredibly flat frequency response, high input impedance and low output resistance.
This transistor type is suitable for applications such as voice and data communication, high speed motor control, HVAC systems, audio amplifiers and switching power supply technology. The device also has the longevity to serve applications requiring long life span, extreme temperature and harsh working conditions, such as those typically encountered in automotive and industrial systems.
The FCMT199N60 is made out of a process technology that has a delicate balance of features such as low on-resistance, low capacitance, low gate charge and very good performance in EMI suppression. The process is designed to handle high levels of current and high temperatures, enabling the transistor to be used in a wide range of applications. The most notable feature of this device is its high operating temperature, which can reach up to 175°C (357°F).
In terms of its working principle, the FCMT199N60 works on an "enhancement" mode. It operates by transitioning from an "off" state to an "on" state, depending on the gate voltage. In other words, when the gate voltage is less than the source voltage, current will not pass through the device, thus keeping it in the "off" state. When the gate voltage becomes greater than the source voltage, current can flow through the device, thus enabling it to switch to the "on" state.
In conclusion, the FCMT199N60 is a powerful switching device that can be used in a variety of applications. Its endurence and longevity makes it a suitable choice when dealing with harsh environmental and extreme temperature conditions. Last but not least, its effective working principle enables the device to quickly transition from "off" to "on" states depending on the gate voltage.
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