FCMT250N65S3 Discrete Semiconductor Products |
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| Allicdata Part #: | FCMT250N65S3OSTR-ND |
| Manufacturer Part#: |
FCMT250N65S3 |
| Price: | $ 1.16 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ON Semiconductor |
| Short Description: | SUPERFET3 650V PQFN88 |
| More Detail: | N-Channel 650V 12A (Tc) 90W (Tc) Surface Mount Pow... |
| DataSheet: |  FCMT250N65S3 Datasheet/PDF |
| Quantity: | 1000 |
| 3000 +: | $ 1.05320 |
| Vgs(th) (Max) @ Id: | 4.5V @ 1.2mA |
| Package / Case: | 4-PowerTSFN |
| Supplier Device Package: | Power88 |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 90W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 1010pF @ 400V |
| Vgs (Max): | ±30V |
| Gate Charge (Qg) (Max) @ Vgs: | 24nC @ 10V |
| Series: | SuperFET® III |
| Rds On (Max) @ Id, Vgs: | 250 mOhm @ 6A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 12A (Tc) |
| Drain to Source Voltage (Vdss): | 650V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tape & Reel (TR) |
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The FCMT250N65S3 is a type of Field Effect Transistor (FET) specifically a MOSFET (Metal Oxide Semiconductor Field Effect Transistor). It is classified as a “Single”, meaning it contains one terminal, or gate. It has a continuous drain current rating of 250A and a drain-to-source voltage rating (VDS) of 650V.
FETs are a type of transistor that use an electric field to control the resistance in a circuit. They are low voltage, low current and highly efficient devices, which offer a high input impedance, and require no bias current. This means that they cannot be switched off, making them the ideal choice for a wide range of applications.
The FCMT250N65S3 is used in a wide range of applications, especially those requiring high power and high current such as welding and plasma cutting. It can also be used in motor control, power supply, automotive electronics and many other applications.
The FCMT250N65S3\'s working principle is based on the fact that when a voltage is applied to the gate terminal, a current flows through the channel of the FET resulting in a resistance between the drain and source. This resistance can be controlled by varying the gate voltage and this is then used to switch the device. The resistance is determined by two factors, the channel width and the channel length. The channel width is determined by the physical properties of the device, while the channel length is determined by the amount of voltage applied to the gate. By varying the gate voltage, the channel length can be changed and the resistance between the drain and source can be controlled.
The FCMT250N65S3 is a high power, high current device and as such is a perfect choice for applications requiring both high power and high current. It is highly efficient, with an excellent on-state resistance, making it a great choice for a wide variety of applications.
The specific data is subject to PDF, and the above content is for reference
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