| Allicdata Part #: | FCP360N65S3R0-ND |
| Manufacturer Part#: |
FCP360N65S3R0 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ON Semiconductor |
| Short Description: | SUPERFET3 650V TO220 PKG |
| More Detail: | N-Channel 650V 10A (Tc) 83W (Tc) Through Hole TO-2... |
| DataSheet: |  FCP360N65S3R0 Datasheet/PDF |
| Quantity: | 1000 |
| Vgs(th) (Max) @ Id: | 4.5V @ 1mA |
| Package / Case: | TO-220-3 |
| Supplier Device Package: | TO-220-3 |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 83W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 730pF @ 400V |
| Vgs (Max): | ±30V |
| Gate Charge (Qg) (Max) @ Vgs: | 18nC @ 10V |
| Series: | SuperFET® III |
| Rds On (Max) @ Id, Vgs: | 360 mOhm @ 5A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 10A (Tc) |
| Drain to Source Voltage (Vdss): | 650V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tube |
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The FCP360N65S3R0 is a power MOSFET with N-channel enhancement mode. It belongs to the FCP series of power MOSFETs, manufactured by the company Fairchild Semiconductor. It offers maximum ratings of 360 volts drain-source voltage, 650 amps drain-source current, and 485 watts power dissipation.
This FCP360N65S3R0 model uses an N-channel Junction FET (JFET) design which makes it ideal for use in applications that require a low input capacitance. As such, it is often used in power supply switching circuits and high-speed digital circuits. Furthermore, the device is well suited for applications requiring low on-state resistance (RDS(on)).
The FCP360N65S3R0 uses a very specific working principle. As a power MOSFET, it relies on a gate voltage to control the current flow between the drain and the source. When the gate voltage is applied, the MOSFET creates a channel between the source and drain and allows current to pass through. When the gate voltage is removed, the channel is shut down and current flow is stopped.
The FCP360N65S3R0 features a compact size and low resistance for maximum efficiency. It also offers excellent thermal performance and superior heat dissipation, making it suitable for use in high-power applications. In addition, it has an integrated ESD protection and a low gate charge, which helps reduce system-level costs.
The FCP360N65S3R0 has a variety of uses. Some of the most common applications include power supply switching, loudspeaker protection, and high-frequency power amplifier design. It is also commonly used in the automotive industry, where it is the preferred power MOSFET for automotive engine control systems and braking systems.
Overall, the FCP360N65S3R0 is an excellent choice for a variety of applications that require a robust, reliable, and powerful power MOSFET. Its low input capacitance, low on-state resistance, and superior thermal performance make it an ideal solution for high-power applications. Also, its integrated ESD protection and low gate charge help minimize system-level costs.
The specific data is subject to PDF, and the above content is for reference
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