FCP380N60

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The FCP380N60 is a part of Power MOSFETs family of transistors, specifically a N-Channel Enhancement Mode Field Effect Transistor (MOSFET). This MOSFET utilizes an insulated gate, offering high input impedance, as well as fast switching times, making it an ideal choice for applications that may require a low on-state resistance.

The main feature of this component is its capability to operate with voltage up to 380V and offer gate to source pass voltage (VGS) of 60V. Additionally, it has the ability to withstand 80A of continuous drain current at 25oC and can reach a maximum of 160A in pulsed applications. The FCP380N60 is available in TO-247 package, encased in an epoxy mold compound (EMC), ideal for use in high power applications as it can dissipate a maximum power of 230W.

The FCP380N60 is a versatile component capable of being used in an array of applications, including motor control, renewable energy inverters, high power DC/DC converters, networking and telecom power supplies, high power lighting and consumer power supplies, relays and switching, ESD protection circuits, as well as welding equipment.

The principle of operation of the FCP380N60 is fairly simple. It is a four layer N-Channel MOSFET comprised of a high concentration of N-type dopants located between two metals (Source and Drain) separated by a thin layer of insulation. The gate connection forms a second metal layer that is connected to a voltage bias source. By applying an appropriate voltage to the gate in comparison with the source, the MOSFET conductivity can be altered according to the applied gate bias.

When a negative bias is applied to the gate with respect to the source, an n-channel is formed while a positive bias causes the depletion of conduction channel, thereby improving current isolation. This voltage response is nonlinear, meaning that the electrical characteristics of the transistor change depending on the gate bias voltage. An important parameter that should be considered when working with MOSFETs such as the FCP380N60 is the power dissipation. It should not exceed its maximum rating as doing so may damage the component.

In summary, the FCP380N60 is a high voltage, single N-channel MOSFET manufactured by Fairchild Semiconductor. It offers up to 380V voltage and 60V gate to source pass voltage, with a maximum current rating of 160A. Its low on-state resistance and fast switching times make it ideal for applications that require high power dissipation, and with its wide range of available packages, it is capable of being used in a variety of applications and environments. Additionally, the simple yet effective principle of operation makes designing and troubleshooting with this transistor a breeze.

The specific data is subject to PDF, and the above content is for reference