| Allicdata Part #: | FDA33N25-ND |
| Manufacturer Part#: |
FDA33N25 |
| Price: | $ 2.34 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ON Semiconductor |
| Short Description: | MOSFET N-CH 250V 33A TO-3PN |
| More Detail: | N-Channel 250V 33A (Tc) 245W (Tc) Through Hole TO-... |
| DataSheet: |  FDA33N25 Datasheet/PDF |
| Quantity: | 2150 |
| 1 +: | $ 2.34000 |
| 10 +: | $ 2.26980 |
| 100 +: | $ 2.22300 |
| 1000 +: | $ 2.17620 |
| 10000 +: | $ 2.10600 |
| Vgs(th) (Max) @ Id: | 5V @ 250µA |
| Package / Case: | TO-3P-3, SC-65-3 |
| Supplier Device Package: | TO-3PN |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 245W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 2200pF @ 25V |
| Vgs (Max): | ±30V |
| Gate Charge (Qg) (Max) @ Vgs: | 46.8nC @ 10V |
| Series: | UniFET™ |
| Rds On (Max) @ Id, Vgs: | 94 mOhm @ 16.5A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 33A (Tc) |
| Drain to Source Voltage (Vdss): | 250V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tube |
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The FDA33N25 is a high voltage N-channel insulated gate field effect transistor (IGFET) designed for digital switching and amplifier applications. It is manufactured by the Fairchild Semiconductor Corporation, which is a leading supplier of semiconductor technology components. The device is suitable for various high voltage applications, such as buck converters, step-down switching regulators, and class-D amplifiers. It is also suitable for audio signal amplification.
The FDA33N25 is a voltage-controlled transistor, which means it can be switched on or off through a voltage change. It functions as a voltage-controlled switch in digital circuits and can be used to control current flow between two points in an electrical circuit. It has an insulated gate, which is insulated from the channel (drain-source) by a thin layer of silicon dioxide (SiO2). This insulation layer serves to prevent short circuits and to ensure that the channel does not become over-saturated with a high current.
The voltage (Vgs) applied to the device is applied to the gate, while the drain and source electrodes form the channel. The resistance between the drain and source (RDSon) is referred to as the "on-resistance" of the device and is usually specified in the datasheet. The on-resistance RDSon is typically very low, in the order of several ohms. The current capability of the device is proportional to the voltage on the gate, with higher voltage causing higher current flow. The off-state drain-source leakage current of the device can be controlled by setting the gate voltage to a value higher than the threshold voltage (Vth).
The FDA33N25 is also characterized by its high-speed switching capability, which is ideal for applications where fast response is required. It also has a low gate charge, which reduces the total gate drive power required for switching the device. The device operates with a high maximum drain source voltage (VDSS) of 50V and a maximum drain-source current (ID) of up to 8.3A. The device has a maximum junction temperature rating of 150°C, allowing it to operate in high-temperature environments. It is also available in a range of different package configurations.
The FDA33N25 is a versatile device and suitable for use in a wide range of applications, including switching power supplies, motor drives, and audio amplifiers. It is designed to provide high performance and reliability, and is capable of operating at high speeds. Additionally, the device has a low on-resistance and is relatively easy to use and integrate in digital circuits. The FDA33N25 is an ideal choice for digital switching and amplifier applications.
The specific data is subject to PDF, and the above content is for reference
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