| Allicdata Part #: | FDA38N30-ND |
| Manufacturer Part#: |
FDA38N30 |
| Price: | $ 2.24 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ON Semiconductor |
| Short Description: | MOSFET N-CH 300V TO-3 |
| More Detail: | N-Channel 300V 38A (Tc) 312W (Tc) Through Hole TO-... |
| DataSheet: |  FDA38N30 Datasheet/PDF |
| Quantity: | 5140 |
| 1 +: | $ 2.24000 |
| 10 +: | $ 2.17280 |
| 100 +: | $ 2.12800 |
| 1000 +: | $ 2.08320 |
| 10000 +: | $ 2.01600 |
| Vgs(th) (Max) @ Id: | 5V @ 250µA |
| Package / Case: | TO-3P-3, SC-65-3 |
| Supplier Device Package: | TO-3PN |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 312W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 2600pF @ 25V |
| Vgs (Max): | ±30V |
| Gate Charge (Qg) (Max) @ Vgs: | 60nC @ 10V |
| Series: | UniFET™ |
| Rds On (Max) @ Id, Vgs: | 85 mOhm @ 19A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 38A (Tc) |
| Drain to Source Voltage (Vdss): | 300V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tube |
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The FET 38N30 is a power MOSFET designed for applications such as DC-DC converters, motor drives, computer power supplies, and power amplifiers. It is a type of metal oxide semiconductor field effect transistor (MOSFET) that performs the same function as a BJT, but is much more efficient and has higher power handling capabilities than a BJT. The FET 38N30 is a N-Channel MOSFET, meaning it is composed of a semiconductor material between two metal contacts that can be used to control the flow of electrons through the device. This makes it ideal for applications in which a high voltage and/or current are required.
The FET 38N30 is a low-voltage power MOSFET that is designed to operate in high-side switch and buck (step-down) converter applications. It has a very low turn-on and turn-off resistance, making it ideal for switching applications. It has low gate drive requirements and has very low gate charge and gate capacitance for an N-channel MOSFET. Additionally, it has an operating temperature range of -55 degrees Celsius to 150 degrees Celsius, making it suitable for a variety of applications.
When used in a system, the FET 38N30 works by allowing a small amount of current through the drain and source terminals when a negative voltage is applied to the gate. This small amount of current is known as the gate current, and it is this current that controls the flow of power between the drain and source terminals. When the gate current is increased, the resistance between the drain and source terminals decreases, allowing more power to flow through the FET. Conversely, when the gate current is decreased, the resistance between the drain and source terminals increases, decreasing the amount of power that can flow through the FET.
The FET 38N30 is designed for use in a variety of applications including motor control, switch mode power supplies, and power amplifiers. In motor control applications, the FET acts as a switch, allowing current to flow to the motor when the gate is activated. In switch mode power supplies, the FET is used to regulate voltage and current, while in power amplifiers, the FET is used to amplify the signal before it is sent to the load.
In conclusion, the FET 38N30 is an excellent choice for applications requiring low turn-on and turn-off resistance, low gate drive requirements, and high power handling capabilities. Its wide operating temperature range makes it suitable for a variety of applications, and its low gate charge and gate capacitance make it an ideal choice for switching applications.
The specific data is subject to PDF, and the above content is for reference
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