FDA50N50 Allicdata Electronics
Allicdata Part #:

FDA50N50-ND

Manufacturer Part#:

FDA50N50

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 500V 48A TO-3P
More Detail: N-Channel 500V 48A (Tc) 625W (Tc) Through Hole TO-...
DataSheet: FDA50N50 datasheetFDA50N50 Datasheet/PDF
Quantity: 403
Stock 403Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 5V @ 250µA
Package / Case: TO-3P-3, SC-65-3
Supplier Device Package: TO-3PN
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 625W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 6460pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 137nC @ 10V
Series: UniFET™
Rds On (Max) @ Id, Vgs: 105 mOhm @ 24A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Drain to Source Voltage (Vdss): 500V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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FETs, or field effect transistors, are a type of semiconductor-controlled device designed to operate as an electronic switch or amplifier. FETs are divided into two broad categories-single and double-gate FETs. The basic concept behind FETs is that they can be used to control current flowing through a device by applying a control voltage to the gate. In this way, FETs are able to achieve various functions, including amplification, switching, rectification and current sensing.

An example of a single-gate FET is the FDA50N50. This device is a n-channel FET, which means that it utilizes only one gate voltage to control the flow of current from the source to the drain. The source and drain terminals are connected to a substrate that is typically made out of silicon and is also referred to as the channel. The gate is then connected to the source by a third terminal, which is known as the gate terminal. When a positive or negative charge is applied to the gate, it creates an electric field that affects the channel in such a way that it changes its resistance to current flow.

The main application of the FDA50N50 is in power systems. In power systems, FETs are used to control the voltage and current levels on the circuit board. For example, they can be used to control the amount of current flowing through a motor or a power supply. The FDA50N50 can also be used in switch-mode power supplies (SMPS) for regulating the output voltage and current. Additionally, it can be used in audio amplifiers to regulate the gain of the output signal.

The working principle of the FDA50N50 is based on its p-n junction. When a voltage is applied to the gate of the FET, it creates an electric field within the substrate, which then alters the resistance of the channel. This alteration affects the current flow through the device, allowing for greater or lesser current in accordance with the gate voltage. The higher the gate voltage, the more current will flow through the FET, and the lower the gate voltage, the less current will flow. This allows the FDA50N50 to act as either a switch or an amplifier, depending on the level of control applied to the gate.

In conclusion, the FDA50N50 is a single-gate FET designed to control current flow in power systems and audio amplifiers. It utilizes a p-n junction with a gate terminal that, when a voltage is applied, creates an electric field within the substrate, altering the resistance of the channel and allowing for either amplification or switching. In this way, the FDA50N50 is an essential component for many power and audio systems.

The specific data is subject to PDF, and the above content is for reference

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