| Allicdata Part #: | FDA59N25-ND |
| Manufacturer Part#: |
FDA59N25 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ON Semiconductor |
| Short Description: | MOSFET N-CH 250V 59A TO-3P |
| More Detail: | N-Channel 250V 59A (Tc) 392W (Tc) Through Hole TO-... |
| DataSheet: |  FDA59N25 Datasheet/PDF |
| Quantity: | 299 |
| Vgs(th) (Max) @ Id: | 5V @ 250µA |
| Package / Case: | TO-3P-3, SC-65-3 |
| Supplier Device Package: | TO-3PN |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 392W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 4020pF @ 25V |
| Vgs (Max): | ±30V |
| Gate Charge (Qg) (Max) @ Vgs: | 82nC @ 10V |
| Series: | UniFET™ |
| Rds On (Max) @ Id, Vgs: | 49 mOhm @ 29.5A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 59A (Tc) |
| Drain to Source Voltage (Vdss): | 250V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tube |
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FDA59N25 is a field-effect transistor which is part of the single-characteristic transistor family. It is a N-channel MOSFET, which means that when current is supplied to the source and gate, it allows the flow of current from the source to the drain. This type of transistor is mainly used in applications that require low voltage, low current switch controls.
The working principle of the N-channel MOSFET can be explained in simple terms. Initially, no current flows in the channel as the gate voltage is low. When the voltage across the gate and source terminals reaches the threshold voltage, the gate-to-source region begins to become more conductive and allows current to flow from the source to the drain. This is known as the inversion layer.
The FDA59N25 utilizes a structure which is designed to minimize parasitic capacitance during the operation of the transistor. This is achieved by utilizing an adjacent field effect region and a continuous metal topology. The metal topology also serves to reduce the RDS (on) resistance of the device. The result is a transistor with increased switching speed as compared to traditional MOSFETs.
FDA59N25 can be used in many applications, such as switch-mode power supplies, DC-DC converters, motor control, relays, and opto-couplers. In addition, it can be used in applications where low voltage and low current switch controls are required. This includes LED lighting systems and portable medical devices.
In conclusion, the FDA59N25 is a single-characteristic N-channel MOSFET utilized for several applications that require low voltage, low current switch controls. It utilizes a structure designed to minimize leakage current and reduce the RDS (on) resistance of the device. The FDA59N25 is a reliable and versatile option for low voltage and low current switches.
The specific data is subject to PDF, and the above content is for reference
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