| Allicdata Part #: | FDH45N50F-F133-ND |
| Manufacturer Part#: |
FDH45N50F-F133 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ON Semiconductor |
| Short Description: | MOSFET N-CH 500V 45A TO-247 |
| More Detail: | N-Channel 500V 45A (Tc) 625W (Tc) Through Hole TO-... |
| DataSheet: |  FDH45N50F-F133 Datasheet/PDF |
| Quantity: | 732 |
| Vgs(th) (Max) @ Id: | 5V @ 250µA |
| Package / Case: | TO-247-3 |
| Supplier Device Package: | TO-247-3 |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 625W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 6630pF @ 25V |
| Vgs (Max): | ±30V |
| Gate Charge (Qg) (Max) @ Vgs: | 137nC @ 10V |
| Series: | UniFET™ |
| Rds On (Max) @ Id, Vgs: | 120 mOhm @ 22.5A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 45A (Tc) |
| Drain to Source Voltage (Vdss): | 500V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tube |
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FDH45N50F-F133 is an N-channel power MOSFET that can be used for a wide range of applications. It has a drain-source resistance of 133 mΩ and can handle power up to 150 W. The device also offers excellent switching characteristics, low on-state resistance, and good thermal stability.
MOSFETs are widely used in electronics circuits because of their low on-state resistance and very low input capacitance. This makes them ideal for both analog and digital applications. The FDH45N50F-F133 is a popular MOSFET that can be used in a variety of different applications. For example, it can be used in power switching applications, DC-DC converters, DC motors, and actuation of high power devices.
The FDH45N50F-F133 is a vertical double diffused MOSFET. It has an insulated gate that can be used to control the electron flow from source to drain. The drain-source voltage is typically 20 V and it supports currents up to 30 A. The device has a very low on-state resistance of 133 mΩ which allows it to switch rapidly and efficiently.
The working principle of the FDH45N50F-F133 MOSFET is simple. When a voltage is applied to the gate of the device, an electric field is created. This electric field attracts electrons and causes them to flow from the source to the drain. This in turn creates a current and allows the device to act as an electronic switch. The device can be used to control the flow of current from source to drain, allowing for precise control over the output.
In addition to its excellent switching capabilities, the FDH45N50F-F133 offers excellent thermal stability and long term reliability. The device is also available in a variety of package sizes and can be used in many different applications. It is a popular choice for use in power switching and high power devices.
The FDH45N50F-F133 is an excellent choice for a wide range of applications. It has low on-state resistance and offers excellent switching performance. It is also reliable and offers good thermal stability. The device is available in a variety of package sizes and can be used in a variety of different applications.
The specific data is subject to PDF, and the above content is for reference
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