FDI9406-F085 Allicdata Electronics
Allicdata Part #:

FDI9406-F085-ND

Manufacturer Part#:

FDI9406-F085

Price: $ 2.25
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 40V 110A TO262AB
More Detail: N-Channel 40V 110A (Tc) 176W (Tj) Through Hole I2P...
DataSheet: FDI9406-F085 datasheetFDI9406-F085 Datasheet/PDF
Quantity: 395
1 +: $ 2.04750
10 +: $ 1.85031
400 +: $ 1.32177
800 +: $ 1.04420
1200 +: $ 0.95829
Stock 395Can Ship Immediately
$ 2.25
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Supplier Device Package: I2PAK (TO-262)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 176W (Tj)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 7710pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 138nC @ 10V
Series: Automotive, AEC-Q101, PowerTrench®
Rds On (Max) @ Id, Vgs: 2.2 mOhm @ 80A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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The FDI9406-F085 MOSFET Transistor is used in a variety of applications as an efficient power switch. It is a discrete component, which is an improved variant of the earlier FDI9006-F085 component. The performance and design of the FDI9406-F085 has been upgraded to provide better efficiency and speed when used in electronic circuits and applications. The most common application of the FDI9406-F085 is in digital logic circuits, motor control systems, motor drives, switching power supplies, and load control.

The FDI9406-F085 is a four-port, single-gate metal-oxide-semiconductor field-effect transistor (MOSFET). It is manufactured using high-quality raw materials for low on-resistance and fast switching speeds. The component has a thickness of 8micrometers and a width of 5micrometers, allowing it to be integrated in to a number of small-scale and large-scale applications. It supports a drain-to-source voltage of 30V and can handle up to 4A of current. The component is designed with an optimal combination of high pin-count and low-resistance characteristics.

The FDI9406-F085 is designed using a single-gate n-channel MOSFET process to provide excellent performance, speed and high-power efficiency. The single-gate structure of the component reduces the total number of pins and decreases the parasitic capacitance and other related circuit parasitics. It also enables a higher switching frequency as compared to devices featuring multiple-gate designs. The component has a low on-resistance which provides increased current driving capability and improved power efficiency.

The working principle of the FDI9406-F085 involves the control of a current flow through the channel formed between the source and drain of the device. A voltage applied across the gate-source terminals of the FDI9406-F085 acts to modulate the channel current flow and allow for greater speed and efficiency in the flow of current. The component can carry and switch up to 4A of current and is typically controlled with a voltage of +/- 4V.

The FDI9406-F085 can be used in a variety of different applications due to its combination of high speed and low on-resistance. It is suitable for controlling current within digital logic circuits, allowing for high speed and efficient operation. It is also ideal for motor control systems, motor drives, switching power supplies and load control applications. In such applications, the FDI9406-F085 provides controlled current flow without any voltage drops caused by long wires or trace lines.

In summary, the FDI9406-F085 MOSFET Transistor is a high-performance and efficient single-gate MOSFET component. It supports a drain-to-source voltage of 30V, carries up to 4A of current, and is capable of operating at a high switching frequency. The component is ideal for applications in digital logic circuits, motor controls, power supplies, and load control. Its combination of high speed and low on-resistance allows for greater efficiency when controlling current in such applications.

The specific data is subject to PDF, and the above content is for reference

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