FDI9409-F085

Vgs(th) (Max) @ Id:	4V @ 250µA
Package / Case:	TO-262-3 Long Leads, I²Pak, TO-262AA
Supplier Device Package:	I2PAK (TO-262)
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	94W (Tj)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	2980pF @ 25V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	56nC @ 10V
Series:	Automotive, AEC-Q101, PowerTrench®
Rds On (Max) @ Id, Vgs:	3.8 mOhm @ 80A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	80A (Tc)
Drain to Source Voltage (Vdss):	40V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tube

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The FDI9409-F085 is a power Metal-Oxide-Semiconductor Field-Effect-Transistor (MOSFET) for use in applications that require low on-state resistance and high breakdown voltage. The FDI9409-F085 is available in a plastic package with a low thermal resistance, making it an ideal choice for large-current applications such as power supplies, converters, and other power circuits.The FDI9409-F085 is a single type of MOSFET, which is a type of transistor used in switching applications. MOSFETs are a type of unipolar transistor, where the current flow is one-directional between the source and drain terminals. The main feature of MOSFETs is their fast switching capability, making them perfect for power applications.The FDI9409-F085 MOSFET features a breakdown voltage (VDS) of 80V, making it suitable for a wide range of applications. It also features a low drain-source on-state resistance (Rds-on) of 0.147Ω at 10V Vgs, which means it can handle large amounts of current without creating large amounts of heat. The FDI9409-F085 is also offered in a surface-mount package, which helps reduce board space and provide more design flexibility.The working principle of the FDI9409-F085 is based on the voltage-controlled, insulated-gate principle. The FDI9409-F085 uses two separate channels of the MOSFET, the drain and the source. The source is connected to ground, while the drain is connected to the load. Voltage applied to the gate controlling the amount of current that can flow between the drain and the source.When no gate voltage is applied to the MOSFET, no current is allowed to flow between the drain and the source. This is known as the "off" state, where the FDI9409-F085 will not pass any current. When a gate voltage is applied, it opens the gate, allowing current to flow between the drain and the source. This is known as the "on" state, where the FDI9409-F085 is said to be conducting.The FDI9409-F085 is commonly used in applications such as motor drives, high-current switching, and power supplies. It\'s also used in automotive electronics, as well as for medical equipment and telecommunications. The FDI9409-F085 is also part of the often unseen yet incredibly important power control circuits in consumer electronics products that keep our iPhones, laptops, and other handhelds running.In short, the FDI9409-F085 is an ideal choice for applications that require low on-state resistance, high breakdown voltage, and fast switching. With its surface-mount package, it can save board space and provide more design flexibility. Given its wide range of applications, it is sure to remain an important component in the power-control circuits of the future.

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