FDM100-0045SP Allicdata Electronics
Allicdata Part #:

FDM100-0045SP-ND

Manufacturer Part#:

FDM100-0045SP

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: MOSFET N-CH 55V 100A I4-PAC-5
More Detail: N-Channel 55V 100A (Tc) Through Hole ISOPLUS i4-P...
DataSheet: FDM100-0045SP datasheetFDM100-0045SP Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 4V @ 1mA
Package / Case: i4-Pac™-5
Supplier Device Package: ISOPLUS i4-PAC™
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): --
FET Feature: --
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 7.2 mOhm @ 80A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Drain to Source Voltage (Vdss): 55V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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FDM100-0045SP is a type of transistor that belongs to field-effect transistors (FETs), more specifically a metal-oxide-semiconductor FET (MOSFET). It is a single lateral transistor that can be used in numerous applications, such as radio frequency (RF) transmission circuits, linear amplifiers, and digital logic systems. Its unique design and powerful characteristics make it suitable for a wide range of applications.

The FDM100-0045SP is built around a three-pin insulated-gate bipolar transistor (IGBT) that consists of two power junctions. One is the source and the other is the drain. This transistor offers excellent linearity and low-noise performance, which makes it ideal for use in applications requiring high levels of precision and accuracy. The FDM100-0045SP is also very efficient in providing power amplification, allowing it to be used in a wide range of applications, from basic analog designs to complex digital designs.

As with all types of FETs, the FDM100-0045SP operates on a principle of voltage and current control. This type of transistor operates by creating and amplifying voltages across two power junctions, the source and the drain. When a voltage is applied to the gate of the transistor, it allows the conduction of current across the two power junctions, creating a current flow. This current flow is then amplified by the transistor and sent out to the desired output terminal.

The main application fields for the FDM100-0045SP transistor are in the analog and digital applications due to its linearity, low noise performance, and affordability. It is commonly used in amplification circuits such as those found in audio amplifiers, pre-amplifiers, and radio frequency transmission circuits. It can also be used for power conversion, regulated power supplies, and voltage regulation.

The FDM100-0045SP is also highly sought after by those looking to build their own circuits. Due to its low cost and easy-to-use characteristics, it is often used in the prototyping stage, where users will design, construct, and test their own electronic circuits. The ability to easily and conveniently modify the FDM100-0045SP\'s characteristics make it an ideal choice for individuals and companies who are involved in the development of complex and unique devices and systems.

When designing a circuit that includes the FDM100-0045SP, it is important to consider the environment the circuit will be used in. The transistor\'s characteristics vary depending on the temperature, humidity, pressure, and other operating conditions, so it is essential to provide the proper electric and environmental conditions for the device to function correctly.

Overall, the FDM100-0045SP is a highly reliable, cost-effective, and easy-to-use transistor designed for a variety of applications. Its high level of precision and accuracy make it ideal for use in a wide range of projects, and its low cost and ease-of-use make it an attractive choice for amateurs and professionals alike. Its powerful characteristics and excellent linearity make it a highly sought-after and trusted transistor for a variety of electronic circuits.

The specific data is subject to PDF, and the above content is for reference

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