FDM15-06KC5

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

FDM15-06KC5 is a N-channel MOSFET, which belongs to the category of transistors, FETs (Field Effect Transistors), MOSFETs (Metal Oxide Semiconductor Field Effect Transistors), and single MOSFETs. This type of transistor is widely used in the field of electronic devices, electronic engineering and communication, where it plays an important role in providing amplification and switching. 

What is N-channel MOSFET? As a kind of MOSFET, it has an electrically insulated gate that lies between the source and drain terminals. Under the action of a gate control signal, the current between the source and drain terminals can be turned on or off to provide switching or amplification. The FDM15-06KC5 is a P-channel enhancement type MOSFET, whose drain current can be on-and-off controlled by the gate voltage.

The FDM15-06KC5 transistor is an N-channel enhancement type MOSFET, which has a drain current proportional to the gate electric field and a gate resistor connected between gate and source. Its drain current at the gate-source voltage is higher than that of the P-channel MOSFET. Its gate voltage remains unchanged within a certain range, and its drain current is controlled by gate-source voltage.

The main application field of the FDM15-06KC5 is for audio-frequency digital switching, signal buffering and storage, amplifier frequency and control digital circuit in portable devices such as Mobile phones, MP3 players, digital cameras, notebook computers and Bluetooth headsets. It is suitable for used in general digital and analog circuits requiring low voltage and low power.

The FDM15-06KC5 uses the principle of MOS transistor to provide switching and amplification. At the same time, it uses a gate electric field to control the drain current, and its drain current is proportional to the gate electric field. In the working state of this transistor, the source and drain terminals constitute a PN junction, and the electric field generated by the gate bias voltage can move the electrons and holes in the junction and promote the conducted current. If the gate voltage increases, the drain current will increase. If the gate voltage decreases, the drain current will decrease.

The FDM15-06KC5 is one of the major components used in the modern electronic device industry. Its application field is very broad, and its working principle is simple and reliable. It is widely used in the above-mentioned portable devices and makes them more attractive and convenient. Through the application of FDM15-06KC5, people can enjoy the convenience, safety and pleasure of modern life.

The specific data is subject to PDF, and the above content is for reference