FDN86246

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The FDN86246 is a single-gate enhancement Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET). It is commonly used for power amplifier and pulse generator applications due to its low on-resistance, fast switching behavior, and ESD tolerance. The FDN86246 features an N-type channel and is built using TrenchMOS Technology, which delivers higher current carrying capability than standard MOSFETs.

Overview

The FDN86246 is a high performance MOSFET that offers low on-resistance, fast switching, and ESD tolerance. It is rated to handle up to 100V and 4A of DC gate power. The gate is configured as a floating gate, so there is no gate bias required.

Features

• High voltage operation: 100V
• Low on-resistance: 4A
• Fast switching: 0.4ns
• TrenchMOS technology
• Enhanced ESD protection

Applications

The FDN86246 has a wide range of applications, including:

• Power amplifiers
• Pulse generators
• Audio amplifiers
• DC/DC converters
• Motor drivers

Working Principle

The FDN86246 is an enhancement MOSFET, which means that the gate voltage needs to be higher than the source voltage for the device to be "on". This means that the FDN86246 needs a positive gate voltage with respect to the source. As the gate voltage is increased, the channel between the source and the drain will become wider and the device will start to conduct current. The higher the gate voltage, the wider the conducting channel and the higher the current that the device can handle.

The FDN86246 is built using TrenchMOS technology, which means that the channel width is much larger than a standard MOSFET and is able to handle higher current densities. This means that the device can handle higher currents while still having an acceptable on-resistance.

The FDN86246 is rated for up to 100V and can handle up to 4A of DC gate power. The gate is configured as a floating gate, so no bias voltage is required.

Conclusion

The FDN86246 is a high performance, single-gate enhancement Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET). It is commonly used for power amplifier and pulse generator applications due to its low on-resistance, fast switching behavior, and ESD tolerance. It is rated for operation up to 100V and 4A of DC gate power.

The FDN86246 is built using TrenchMOS Technology, which delivers higher current carrying capability than standard MOSFETs. The gate is configured as a floating gate, so there is no gate bias required. The device is widely used in a variety of applications, including power amplifiers, pulse generators, audio amplifiers, DC/DC converters, and motor drivers.

In summary, the FDN86246 is a powerful, high performance MOSFET with a wide range of applications. It features low on-resistance, fast switching, and high ESD tolerance, making it a cost-effective solution for a variety of power amplification and pulse generation tasks.

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