| Allicdata Part #: | FDN86265PTR-ND |
| Manufacturer Part#: |
FDN86265P |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ON Semiconductor |
| Short Description: | MOSFET P-CH 150V 0.8A 3SSOT |
| More Detail: | P-Channel 150V 800mA (Ta) 1.5W (Ta) Surface Mount ... |
| DataSheet: |  FDN86265P Datasheet/PDF |
| Quantity: | 1000 |
| Vgs(th) (Max) @ Id: | 4V @ 250µA |
| Package / Case: | TO-236-3, SC-59, SOT-23-3 |
| Supplier Device Package: | SuperSOT-3 |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 1.5W (Ta) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 210pF @ 75V |
| Vgs (Max): | ±25V |
| Gate Charge (Qg) (Max) @ Vgs: | 4.1nC @ 10V |
| Series: | PowerTrench® |
| Rds On (Max) @ Id, Vgs: | 1.2 Ohm @ 800mA, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 6V, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 800mA (Ta) |
| Drain to Source Voltage (Vdss): | 150V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | P-Channel |
| Part Status: | Active |
| Packaging: | Tape & Reel (TR) |
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The FDN86265P is a n-channel enhancement mode field effect transistor (FET). It is designed to provide high performance power switching capability in either linear or switching regulator applications. This FET has high output current and low on-state resistance which makes it ideal for use in power supplies, converters, and inverters.
A FET consists of a gate, a source, and a drain. The gate is responsible for controlling the flow of the charge carriers, in this case electrons. The gate is insulated from the source and drain, and generally requires a small amount of gate voltage to control the charge flow. The FDN86265P is an enhancement mode FET, meaning that it requires a positive voltage applied to the gate in order to turn on. This makes it ideal for use in circuits where a voltage controlled switch is desired.
The source of the FET is the starting point for charge carriers. The source is connected to the negative side of the circuit, and will usually be connected to ground. The drain of the FET is the end point for the charge carriers, and is connected to the positive side of the circuit or the load. The FDN86265P has a maximum continuous drain current of 24 amps, and an adjustable RDS-on (drain-source on resistance) of between 2 to 6 milli ohms, depending on the gate voltage. The FET also has a built-in linear regulator feature, which allows it to be used with low frequency power converters.
The FDN86265P is ideal for use in applications such as DC/DC converters, power supplies, solar inverters, AC/DC adapter, automotive electronics, and more. It offers superior performance over other FETs due to its high output current, low on-state resistance, and linear regulator feature. Additionally, it is rated at a maximum drain-source voltage of 200 V and is available in a wide variety of packages and sizes, making it suitable for a variety of applications.
In summary, the FDN86265P is an n-channel enhancement mode field effect transistor with high output current, adjustable RDS-on, and linear regulator feature. It is ideal for use in applications such as DC/DC converters, power supplies, solar inverters, AC/DC adapter, automotive electronics, and more. With its wide variety of packages and sizes, the FDN86265P is suitable for a multitude of applications.
The specific data is subject to PDF, and the above content is for reference
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