FDT3612

The FDT3612 is a single-molded nano-sized N-channel MOSFET (Metal Oxide Semiconductor Field Effect Transistor) intended for use in power management applications. It is a great component to use in cases where space and weight are at a premium, due to its relatively small size and weight.The FDT3612 is part of the High Voltage Micro Junction Family developed by Freescale Semiconductor. The FDT3612 is specifically intended for use in applications in the automotive, consumer, and industrial markets. These would include uses such as motor control motor where space and weight are key considerations because of the high voltage requirements.The FDT3612 is a highly efficient MOSFET that is based on the company\'s advanced Twin Ground Plate (TGP) technology. The TGP technology offers better high-voltage breakdown characteristics and high-frequency operation due to the reduced total gate charge.In addition, the FDT3612 has a built-in overvoltage protection feature which helps reduce the risk of damages due to overvoltage conditions. It also has an on-resistance that is very low vs. its breakdown voltage, a characteristic that helps the component achieve higher efficiency in the circuit.The FDT3612 has a 50V maximum drain to source voltage and it can withstand up to 20 volts gate to source voltage. The maximum drain current is 10A. The on-state resistance is typically 2 ohms and the maximum power consumption is 13.2 watts.The FDT3612 also features built-in protection from drain to source shorts and from transient voltage spikes. It has a thermally efficient lead frame design that reduces heat dissipation and makes it well suited for use in highly banded applications. The FDT3612 is also AEC-Q100 qualified for automotive applications. The FDT3612 is a great choice for applications that require high voltage with low total gate charge and excellent thermal performance. It is also a great choice for applications that require high switching speed and high current density.The FDT3612 works on the principle of the MOSFET. MOSFETs are found in devices ranging from powerful motors to delicate integrated circuits. Its operation is based on the principle that an electric field can control the resistance of a conductor. Change in electric field applied between a gate and a source determines the conduction between the drain and the source. Electric field mainly controls the surface electron population of a semiconductor material situated between the gate and source terminal. As the electric field increases or decreases, the surface electron population also increases and decreases, thus changing the resistance between the drain and source terminals.In the most simple scenario, a MOSFET operates as a switch. When a voltage is applied to the gate and source terminals, the device will conduct through the drain, and when the voltage is removed, the device’s conduction stops. This switching action makes the MOSFET ideal for controlling the power in many electronic devices.In the case of the FDT3612, it is based on the same principle, with increased efficiency and improved safety due to its built-in protection from drain to source shorts and from transient voltage spikes. The FDT3612 is a great choice for many automotive, consumer, and industrial applications due to its size and its high efficiency due to its TGP technology. Its on-state resistance and low gate-charge enable it to provide high switching speeds and high current density, along with built-in protections to keep the system safe.