| Allicdata Part #: | FDT3N40TFTR-ND |
| Manufacturer Part#: |
FDT3N40TF |
| Price: | $ 0.16 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ON Semiconductor |
| Short Description: | MOSFET N-CH 400V 2A SOT-223 |
| More Detail: | N-Channel 400V 2A (Tc) 2W (Tc) Surface Mount SOT-2... |
| DataSheet: |  FDT3N40TF Datasheet/PDF |
| Quantity: | 4000 |
| 1 +: | $ 0.16000 |
| 10 +: | $ 0.15520 |
| 100 +: | $ 0.15200 |
| 1000 +: | $ 0.14880 |
| 10000 +: | $ 0.14400 |
| Vgs(th) (Max) @ Id: | 5V @ 250µA |
| Package / Case: | TO-261-4, TO-261AA |
| Supplier Device Package: | SOT-223-4 |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 2W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 225pF @ 25V |
| Vgs (Max): | ±30V |
| Gate Charge (Qg) (Max) @ Vgs: | 6nC @ 10V |
| Series: | UniFET™ |
| Rds On (Max) @ Id, Vgs: | 3.4 Ohm @ 1A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 2A (Tc) |
| Drain to Source Voltage (Vdss): | 400V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tape & Reel (TR) |
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The FDT3N40TF is a silicon MOSFET device that is manufactured with advanced Trench Flotation technology. It has been designed to deliver superior performance in high current, low voltage applications. It is commonly used in audio amplification applications and other digital switching circuits. This article will discuss the application field and working principle of the FDT3N40TF.
Application Field of the FDT3N40TF
The FDT3N40TF is a MOSFET device designed for high current and low voltage applications. It is commonly used in audio amplifier circuits and other digital switching applications. It has a maximum drain current of 40A and a maximum gate-source voltage of 20V. It has a low gate-source capacitance of 12.8nF and a low on-resistance of 21.5mΩ. The device is capable of operating up to a maximum temperature of 175C. It is well suited for switch mode power supplies, motor control applications and digital signal switching. It is also suitable for use in high frequency switching circuits.
Working Principle of the FDT3N40TF
The FDT3N40TF is a silicon MOSFET device with a built-in gate protection. It works by controlling the flow of electrons between two terminals. When no gate voltage is applied to the device, the electrons do not flow and the device is in an OFF state. When the gate voltage is applied, the device is switched to the ON state, allowing electrons to flow between the terminals. The gate protection prevents excessive gate voltages from damaging the device.
The FDT3N40TF is an N-channel MOSFET device. This means that electrons flow from the source to the drain when the gate voltage is applied. It also means that the FDT3N40TF will have an ON-resistance (Rdson) which is lower than an equivalent P-channel MOSFET. This makes the FDT3N40TF ideal for high current applications, as it can provide greater current than a P-channel device.
Conclusion
The FDT3N40TF is a MOSFET device designed for high current and low voltage applications. It is well suited for audio amplifier circuits and other high frequency switching applications. It has a maximum drain current of 40A, a maximum gate-source voltage of 20V and a low on-resistance of 21.5mΩ. The device is also equipped with a gate protection mechanism to protect the device from excessive gate voltages.
Overall, the FDT3N40TF is an excellent choice for high current and low voltage applications. It offers superior performance and is suitable for use in high frequency switching circuits.
The specific data is subject to PDF, and the above content is for reference
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