Allicdata Part #: | FDU7030BL-ND |
Manufacturer Part#: |
FDU7030BL |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 30V 14A I-PAK |
More Detail: | N-Channel 30V 14A (Ta), 56A (Tc) 2.8W (Ta), 60W (T... |
DataSheet: | FDU7030BL Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Package / Case: | TO-251-3 Short Leads, IPak, TO-251AA |
Supplier Device Package: | IPAK (TO-251) |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 2.8W (Ta), 60W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1425pF @ 15V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 20nC @ 5V |
Series: | PowerTrench® |
Rds On (Max) @ Id, Vgs: | 9.5 mOhm @ 14A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 14A (Ta), 56A (Tc) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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The FDU7030BL is a small signal N-MOSFET that has a good application for use in battery powered and low power applications. It is suitable for use in high frequency switching applications, such as power management and dc-dc converters. It is also suitable for use in high power amplifiers and complementary pair applications. The FDU70030BL incorporates a unique "double-shielded gate" technology which is designed to reduce gate-source capacitance and provide stable gate drive characteristics.
The FDU70030BL MOSFET is fabricated on a Si wafer and has a threshold voltage of 4V, an ON resistance of 4 ohms, and a drain-source voltage rating of 50V. The drain current is rated at 3A, which is adequate for use in low power and medium power applications. The body affixes in a four-terminal TO-220 package with a lead-free termination, making it easier to work with than other MOSFETs.
The FDU70030BL’s working principle involves the transistor as switches, which are controlled by the gate voltage. The gate voltage forms a variable width channel between the source and drain, and when the gate voltage is sufficient, current can flow between the source and drain. The gates of the FDU70030BL are double shielded, which prevents leakage across the gate insulation and improves gate drive performance. The channel width is determined by the voltage applied to the gate, and it can be varied in order to control current flow. This makes the FDU70030BL useful for a variety of switching applications.
The FDU70030BL is an ideal MOSFET for use in battery powered and low power electronic circuits. Its low threshold voltage and low on-resistance makes it a good choice for high frequency switching, such as power management DC-DC converters, high power amplifiers, and complementary pair applications. The double-shielded gate provides stable gate drive performance, reducing gate-source leakage and allowing the MOSFET to operate efficiently in these applications.
The FDU70030BL is a versatile MOSFET that can be used for a variety of applications in battery powered and low power electronics. Its low threshold voltage and low on-resistance make it suitable for high frequency switching applications, such as power management and dc-dc converters. The double-shielded gate keeps gate source leakage to a minimum, improving gate drive performance and enabling the use of the FDU70030BL in high power amplifiers, as well as complementary pair applications.
The specific data is subject to PDF, and the above content is for reference
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