FDU7N60NZTU

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The FDU7N60NZTU is a N-channel enhancement mode MOSFET (metal oxide semiconductor field effect transistor). This type of transistor has two operating regions, namely the cutoff region, where current does not flow, and the linear region, where the current flow is proportional to the voltage difference. The MOSFET can thus be driven either to the cutoff or linear region via the gate voltage, therefore making it ideal for power switching applications such as motor speed control, relays, industrial motor drives and more. The main advantage of this MOSFET is that it has a very low gate-charge, which is important for switching applications since it translates into a faster switching time.

In order to understand the application field and working principle of the FDU7N60NZTU, we will first look at what metal oxide semiconductor field effect transistors are. MOSFETs are transistors that use a metallic gate and an insulated gate to control current flow between the source and drain terminals. The insulated gate - usually made of silicon dioxide - prevents the current from flowing unless it is given a specific voltage. This characteristic makes them excellent for low current applications, since the current through them is limited by the gate voltage.

The application field for the FDU7N60NZTU MOSFET is primarily power switching. As mentioned before, it uses a very low gate-charge, which allows for faster switching times, making it ideal in applications such as motor speed control and relays. Other applications include motor drives, power supplies, and battery chargers. In some cases, the FDU7N60NZTU can even be used in audio amplifiers, since it offers excellent distortion characteristics.

The FDU7N60NZTU’s working principle is based on the fundamental concepts of MOSFETs. The gate voltage is used to regulate the flow of current between the source and drain terminals. The higher the gate voltage, the greater the current flow, and the lower the gate voltage, the less the current flow. This makes it easy to control the flow of power in the circuit, allowing for precise power switching.

The FDU7N60NZTU also features an ultra-low R_DS(ON), which allows for efficient power delivery with minimal heat losses. In addition, its breakdown voltage rating of 600V also helps to ensure that the device will not be damaged under high voltages. Finally, its low gate-charge translates into a high switching frequency, making it ideal for fast switching applications.

In conclusion, the FDU7N60NZTU is an N-channel enhancement mode MOSFET that is optimized for power switching applications. Its low gate-charge and ultra-low R_DS(ON) allow it to provide efficient power delivery, while its ultra-low gate charge provides for fast switching times. These characteristics make the FDU7N60NZTU the ideal choice for applications such as motor speed control, relays, motor drives, power supplies, and audio amplifiers.

The specific data is subject to PDF, and the above content is for reference