FDV301N-NB9V005 Discrete Semiconductor Products

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The FDV301N-NB9V005 is a single n-channel, high voltage MOSFET designed for use in a wide variety of power management applications. It utilizes advanced trench technology to provide the desired characteristics of low on-state resistance, highway dielectric strength and a high switching speed. Understanding the principles of how the device works and its applications can help engineers in selecting the right MOSFETs for their system designs.

MOSFET Basics

MOSFETs (metal-oxide-semiconductor field-effect transistors) are one of the most widely used active components in modern electronics. Unlike many other types of transistors, a MOSFET does not rely on electrical current passing through it for its operation. Instead, it utilizes an electric field applied across its gate and source terminals to control current flow through its drain terminal. As a result, MOSFETs are well suited for applications such as high-current power supplies and motor control.

FDV301N-NB9V005 Features

The FDV301N-NB9V005 is a single 150V n-channel MOSFET with an on-state resistance (R_DS(ON)) of 0.27Ω. It has an avalanche energy rated (E_AS) of 119mJ and a drain current rating (I_D) of 5A. It also has a maximum voltage rating of 200V and a maximum Power Dissipation (P_D) of 2.5W. It is housed in the SOT-223 package, making it suitable for a wide range of circuit designs.

FDV301N-NB9V005 Applications

The FDV301N-NB9V005 is well suited for a variety of power management applications. It can be used to switch high-current loads such as motors, solenoids and relays. It can also be used in power supplies, voltage regulators, and motor speed controllers. Moreover, its low on-state resistance and high switching speeds make it ideal for high frequency switching applications.

Working Principle

The FDV301N-N-B9V005 MOSFET works by utilizing an electric field to control the current flow between its source and drain terminals. When a positive voltage is applied to the gate terminal, an electric field is generated, which creates a channel between the source and drain terminals. This allows current to flow between the source and drain terminals when a voltage is applied across them. The amount of current that flows is determined by the strength of the electric field between the gate and source terminals. As the voltage applied to the gate terminal increases, the electric field strength increases, resulting in a higher current flow between the source and drain terminals.

When the voltage applied to the gate terminal is reduced, the electric field strength decreases, resulting in a lower current flow between the source and drain terminals. This principle is known as Field Effect Transistor (FET) action and is what makes MOSFETs so useful for power management applications.

Conclusion

The FDV301N-NB9V005 is a single n-channel MOSFET designed for use in power management applications. Its low on-state resistance, highway dielectric strength, and high switching speed make it well suited for controlling high current loads such as motors, solenoids, and relays. It can also be used in power supplies, voltage regulators, and motor speed controllers. Understanding how its principles of operation, as well as its capabilities, can help engineers in selecting the right MOSFET for their system designs.

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