| Allicdata Part #: | FDV304PTR-ND |
| Manufacturer Part#: |
FDV304P |
| Price: | $ 0.05 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ON Semiconductor |
| Short Description: | MOSFET P-CH 25V 460MA SOT-23P-Channel 25V 460mA (T... |
| More Detail: | N/A |
| DataSheet: |  FDV304P Datasheet/PDF |
| Quantity: | 4846 |
| 1 +: | $ 0.04800 |
| 10 +: | $ 0.04656 |
| 100 +: | $ 0.04560 |
| 1000 +: | $ 0.04464 |
| 10000 +: | $ 0.04320 |
| Series: | FDV304P |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Active |
| FET Type: | P-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 25V |
| Current - Continuous Drain (Id) @ 25°C: | 460mA (Ta) |
| Drive Voltage (Max Rds On, Min Rds On): | 2.7V, 4.5V |
| Rds On (Max) @ Id, Vgs: | 1.1 Ohm @ 500mA, 4.5V |
| Vgs(th) (Max) @ Id: | 1.5V @ 250µA |
| Power - Max: | -- |
| Gate Charge (Qg) (Max) @ Vgs: | 1.5nC @ 4.5V |
| Vgs (Max): | ±8V |
| Input Capacitance (Ciss) (Max) @ Vds: | 63pF @ 10V |
| FET Feature: | -- |
| Power Dissipation (Max): | 350mW (Ta) |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Supplier Device Package: | SOT-23 |
| Package / Case: | TO-236-3, SC-59, SOT-23-3 |
| Base Part Number: | FDV304P |
Due to market price fluctuations,if you need to purchase or consult the price.You can contact us or emial to us: sales@allicdata.com
1. Description
The P-channel enhancement mode field effect transistor is produced using ON Semiconductor’s proprietary advanced battery Density, DMOS technology. This very high density process is Designed to minimize on-resistance during low gate drive To adapt. The device is designed for applications In battery power applications such as laptops And cell phone. The device has an excellent turn-on state High resistance can be maintained even at gate drive voltages as low as 2.5 volts.
2. Features
1. -25 V, -0.46 A continuous, -1.5 A Peak.
RDS(ON) = 1.1 W @ VGS = -4.5 V
RDS(ON) = 1.5 W @ VGS= -2.7 V.
2. Very low level gate drive requirements allowing direct operation in 3V circuits. VGS(th) < 1.5V.
3. Gate-Source Zener for ESD ruggedness.
>6kV Human Body Model
4. Compact industry standard SOT-23 surface mount package.
3. Package Demensions
| Part Number | Manufacturer | Price | Quantity | Description |
|---|
| FDV304P_NB8U003 | ON Semicondu... | 0.0 $ | 1000 | MOSFET P-CH 25V 460MA SOT... |
| FDV302P-NB8V001 | ON Semicondu... | 0.0 $ | 1000 | MOSFET P-CH 25V 120MA SOT... |
| FDV301N-NB9V005 | ON Semicondu... | 0.0 $ | 1000 | MOSFET N-CH 25V 220MA SOT... |
| FDV304P | ON Semicondu... | -- | 4846 | MOSFET P-CH 25V 460MA SOT... |
| FDV303N_NB9U008 | ON Semicondu... | 0.0 $ | 1000 | MOSFET N-CH 25V 680MA SOT... |
| FDV301N_D87Z | ON Semicondu... | 0.0 $ | 1000 | MOSFET N-CH 25V 0.22A SOT... |
| FDV305N | ON Semicondu... | -- | 50000 | MOSFET N-CH 20V 0.9A SOT-... |
| FDV302P | ON Semicondu... | -- | 69000 | MOSFET P-CH 25V 120MA SOT... |
| FDV304P-D87Z | ON Semicondu... | 0.0 $ | 1000 | MOSFET P-CH 25V 0.46A SOT... |
| FDV302P_D87Z | ON Semicondu... | 0.0 $ | 1000 | MOSFET P-CH 25V 0.12A SOT... |
| FDV301N | ON Semicondu... | -- | 58 | MOSFET N-CH 25V 220MA SOT... |
| FDV303N | ON Semicondu... | -- | 2710 | MOSFET N-CH 25V 680MA SOT... |
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