Allicdata Part #: | FDY300NZTR-ND |
Manufacturer Part#: |
FDY300NZ |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 20V 600MA SC89 |
More Detail: | N-Channel 20V 600mA (Ta) 625mW (Ta) Surface Mount ... |
DataSheet: | FDY300NZ Datasheet/PDF |
Quantity: | 12000 |
Vgs(th) (Max) @ Id: | 1.3V @ 250µA |
Package / Case: | SC-89, SOT-490 |
Supplier Device Package: | SC-89-3 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 625mW (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 60pF @ 10V |
Vgs (Max): | ±12V |
Gate Charge (Qg) (Max) @ Vgs: | 1.1nC @ 4.5V |
Series: | PowerTrench® |
Rds On (Max) @ Id, Vgs: | 700 mOhm @ 600mA, 4.5V |
Drive Voltage (Max Rds On, Min Rds On): | 1.8V, 4.5V |
Current - Continuous Drain (Id) @ 25°C: | 600mA (Ta) |
Drain to Source Voltage (Vdss): | 20V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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FDY300NZ, otherwise known as the N-Channel Enhanced Mode Field Effect Transistor, is a power MOSFET that is ideally suited for use in high-power applications, such as audio and DC/DC converter circuits. It is a mode of FET that is produced using the advanced semiconductor technology of planar MOSFETs and special design configurations to enhance the power MOSFET’s reliability and stability. FDY300NZ has a low threshold voltage and very good on-state resistance that is critical in high-frequency applications. Thus, it is an excellent choice for DC-DC and audio applications.
An FDY300NZ is a single transistor device. It has three terminals: source, drain, and gate. The source terminal is the input of a transistor, as it is connected to the outer (power supply) while the drain terminal is the output and it is connected to the load. The gate is the control terminal of the transistor and it is the input to the power MOSFET. The operation of the FDY300NZ is based on the application field of the FET.
The application field of FDY300NZ is mainly used in switching power supply and audio amplifier circuits. Due to the enhanced mode configuration, the FDY300NZ can deliver up to 150W of power with lower on-state resistance to provide higher efficiency. In addition, it boasts excellent switching performance for low switching losses and better sound quality. It also combines high-frequency operation at up to 10MHz with low gate-source voltage, making it ideal for switching power supply applications.
The working principle of FDY300NZ is simple yet effective. When the gate voltage is higher than the threshold voltage (2.5V for example), current can flow between source and drain terminals. As the gate voltage is increased, the current flow increases, thus providing higher power output. In addition, if the gate voltage is lowered, current flow ceases and the transistor is therefore turned off, providing a controllable switch.
In conclusion, FDY300NZ is an ideal single transistor device that is suitable for a wide range of applications, including switching power supply and audio amplifier circuits. It combines excellent performance with a low threshold voltage and high-frequency operation. As such, it is an excellent choice for high-power circuits.
The specific data is subject to PDF, and the above content is for reference
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