
Allicdata Part #: | FDY302NZTR-ND |
Manufacturer Part#: |
FDY302NZ |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 20V SC-89-3 |
More Detail: | N-Channel 20V 600mA (Ta) 625mW (Ta) Surface Mount ... |
DataSheet: | ![]() |
Quantity: | 90000 |
Vgs(th) (Max) @ Id: | 1.5V @ 250µA |
Package / Case: | SC-89, SOT-490 |
Supplier Device Package: | SC-89-3 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 625mW (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 60pF @ 10V |
Vgs (Max): | ±12V |
Gate Charge (Qg) (Max) @ Vgs: | 1.1nC @ 4.5V |
Series: | PowerTrench® |
Rds On (Max) @ Id, Vgs: | 300 mOhm @ 600mA, 4.5V |
Drive Voltage (Max Rds On, Min Rds On): | 1.8V, 4.5V |
Current - Continuous Drain (Id) @ 25°C: | 600mA (Ta) |
Drain to Source Voltage (Vdss): | 20V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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FDY302NZ is an N-channel enhancement mode power MOSFET (metal-oxide-semiconductor field-effect transistor) manufactured by Fairchild Semiconductor. It has a drain current rating of 30 amperes and a total gate charge of 93 nanocoulombs. Hence, it is suitable for various applications that require high current and fast load switching.
The working principle of an enhancement mode power MOSFET is that, when the gate voltage is lower than the source voltage, the transistor is in the "off" state, and the drain-source channel is blocked. When the gate voltage is raised to the same level as the source voltage, the MOSFET is "on" and the drain-source channel is conducting. This is termed as the "threshold voltage".
FDY302NZ is a versatile MOSFET that is suitable for various applications such as motor driving, switching DC-DC converters and motor control. With its high current and fast load switching capability, FDY302NZ is also capable of supporting high frequency applications, such as Class D audio amplifiers. Its low gate charge (low input capacitance) results in less losses when switching from the ON to the OFF state, which is especially beneficial in high frequency applications.
In addition, FDY302NZ offers various features that make it ideal for use as an efficient switching device. Its gate oxide insulation layer offers high tolerance to gate over-voltage and provides improved ESD immunity and noise resistance. Its Kelvin source feature helps to reduce switching loss and reduce reverse recovery charge, resulting in improved efficiency. Its built-in temperature sensing elements ensure junction temperature monitoring and thermal shutdown protection.
Furthermore, FDY302NZ has a maximum drain-source voltage of 60 volts and a drain-source on-state resistance of 0.070 ohms. Its maximum power dissipation is 140 watts, enabling it to support applications with high power requirements. Additionally, it is RoHS (Restriction of Hazardous Substances) compliant and has a high dielectric withstanding voltage of 5.5 kilovolts.
Overall, FDY302NZ is a versatile power MOSFET suitable for a wide range of applications. Its features such as low gate charge, high current and fast switching capability, gate oxide insulation layer, Kelvin source feature and high dielectric withstanding voltage make it an ideal choice for efficient, high power and high frequency applications.
The specific data is subject to PDF, and the above content is for reference
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