| Allicdata Part #: | FDZ661PZTR-ND |
| Manufacturer Part#: |
FDZ661PZ |
| Price: | $ 0.20 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ON Semiconductor |
| Short Description: | MOSFET P-CH 20V 2.6A 4-WLCSP |
| More Detail: | P-Channel 20V 2.6A (Ta) 1.3W (Ta) Surface Mount 4-... |
| DataSheet: |  FDZ661PZ Datasheet/PDF |
| Quantity: | 10000 |
| 5000 +: | $ 0.17605 |
| Vgs(th) (Max) @ Id: | 1.2V @ 250µA |
| Package / Case: | 4-XFBGA, WLCSP |
| Supplier Device Package: | 4-WLCSP (0.8x0.8) |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 1.3W (Ta) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 555pF @ 10V |
| Vgs (Max): | ±8V |
| Gate Charge (Qg) (Max) @ Vgs: | 8.8nC @ 4.5V |
| Series: | PowerTrench® |
| Rds On (Max) @ Id, Vgs: | 140 mOhm @ 2A, 4.5V |
| Drive Voltage (Max Rds On, Min Rds On): | 1.5V, 4.5V |
| Current - Continuous Drain (Id) @ 25°C: | 2.6A (Ta) |
| Drain to Source Voltage (Vdss): | 20V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | P-Channel |
| Part Status: | Active |
| Packaging: | Tape & Reel (TR) |
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The FDZ661PZ is an advanced type Field Effect Transistor (FET) that has been designed to provide a convenient solution for a wide range of applications requiring a reliable switching and/or amplification device. As a type of single FET, FDZ661PZ is constructed with three pins: gate, drain, and source. It benefits from a simple, compact yet robust structure, high-density packaging, and low leakage current.
The FDZ661PZ is designed to provide an extremely reliable performance, despite the extremely harsh environment of the application. It is capable of operating at a wide range of temperatures, allowing it to be used in a variety of applications. Additionally, the FET is built with a low threshold voltage for efficiently operating at 24 VDC. This makes the FDZ661PZ ideal for applications requiring a reliable switch, suitable for even the most demanding electronic conditions.
An important characteristic of the FDZ661PZ is its excellent response to fast switching environments. By using a well defined on and off state, the FET is able to switch very quickly, enabling the user to design systems with a high switching speed. In addition, the switching capability of the FDZ661PZ can be enhanced by including a gate resistor. This minimizes the total switching time and increases overall efficiency.
The FDZ661PZ is developed with an advanced working principle that takes full advantage of its capabilities. It is based on the voltage-controlled current concept, where the FET\'s gate voltage is used to control its drain current. Typically, when the gate voltage is increased above the FET\'s threshold voltage, the FET will turn on, allowing current to flow in the circuit. Conversely, when the gate voltage is below the FET\'s threshold voltage, the FET will turn off, preventing the current flow.
This simple working principle makes the FDZ661PZ an ideal choice for a wide range of applications. It is suitable for any device that requires a stable and reliable switching mechanism, such as automotive engine systems, robotics, and electronic appliances. Furthermore, its ability to operate reliably under harsh conditions makes it an ideal choice for any application where reliability is of utmost importance.
In conclusion, the FDZ661PZ is a single FET that provides excellent performance in terms of both its design and working principle. It is a reliable choice for any application requiring a reliable switch, whether in automotive, robotics, or any other industry. Additionally, its operating principle allows the device to switch very quickly and efficiently, making it an ideal choice for applications with a fast switching environment.
The specific data is subject to PDF, and the above content is for reference
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