FDZ663P Discrete Semiconductor Products

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FDZ663P is a single, surface mount, zinc-dioxide metal-oxide-semiconductor field-effect transistor (MOSFET). It was designed by Vishay as a high-performance device for surface mount applications, specifically in power switching, switching power supplies, and power amplifiers. It is well-suited for a wide range of applications, including high-side and low-side switching, power MOSFETs, and power MOSFETs in parallel.

The FDZ663P chip is a dual N-channel (DN) MOSFET, which is built on a high-resistivity silicon substrate. It has an integrated gate oxide, field-oxide, and gate-oxide-substrate structures, which enable low source-drain capacitance and low on-state resistance. It is also equipped with a floating source terminal and counter-drain connections, allowing it to be operated in a current-sourcing or current-sinking mode.

The working principle of FDZ663P MOSFET is based on a physical phenomenon called the quantum-mechanical tunneling effect. This effect occurs when electrons tunnel through the oxide layer in order to move from one side of the transistor to the other. This action creates a conductive channel between the two sides, which in turn allows current to flow through the transistor.

The FDZ663P MOSFET has a variety of applications, primarily in power switching and switching power supplies. It is commonly used in high-power amplifiers, adjustable power supplies, and switchmode converters, where its low R on (on-state resistance) is essential to achieving high efficiency. Additionally, its low capacitance can help reduce EMI, while its counter drain connection makes it suitable for use in multiple-device configurations.

The FDZ663P MOSFET is also suitable for automotive applications, and it can be used as an energy-efficient switching element in applications such as airbag controls and fuel injection systems. Additionally, its low input capacitance and high drive capability make it an ideal choice for use in gate drivers, audio amplifiers, and other consumer electronic applications.

In summary, the FDZ663P MOSFET is a high performance, single device for surface mount applications. It features a low on-state resistance, low capacitance, and floating source and counter-drain connections, making it suitable for use in a variety of applications. Additionally, its quantum-mechanical tunneling effect-based working principle makes it viable for use in several power switching and switching power supply scenarios.

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