FGH75N60SFTU

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Introduction

FGH75N60SFTU is a type of Insulated Gate Bipolar Transistor (IGBT) with an insulated gate field-effect transistor, or FET, as its input. It is a single IGBT with a maximum collector-emitter voltage of 600V and a maximum collector current of 75 A.

Application Field

FGH75N60SFTU is commonly employed in a variety of high-power applications. It can be used as a high-frequency solid-state switch in electric power drive systems, such as wind turbines, electric vehicles and solar energy conversion systems. The high collector-emitter voltage and current ratings of the device make it suitable for these power electronic applications. It can be used as an inverter switch or a bidirectional motor controller by utilizing the full body diode that it contains. The low switching loss of the device makes it ideal for frequency inverters and motor drives requiring high-speed operation. The insulated gate field-effect transistor contained in the device also makes it suitable for high-power AC or DC servo control functions.

Working Principle

FGH75N60SFTU is a single IGBT featuring a three-terminal semiconductor device that includes an insulated gate field-effect transistor (FET) and a bipolar transistor in the same package. The insulated gate FET works as the control gate in the device and enables the IGBT to switch on and off very quickly compared to conventional bipolar transistors. This is due to the fast switching speed of FETs and the fact that the gate itself is isolated and not connected directly to the current flow between collector and emitter. The three terminals of the FET–gate, drain, and source–are connected to the base, collector, and emitter of the bipolar transistor, respectively. When voltage is supplied to the gate, current flows through the FET and creates a deep depletion zone in the P-type semiconductor substrate. This zone eliminates near-surface carriers, thus allowing current to flow between the base and the collector and allowing the collector current to increase. This action turns the IGBT on, allowing current to flow from the collector to the emitter. When the gate voltage is shut off or reversed, current ceases to flow in the device and the IGBT turns off.

Conclusion

FGH75N60SFTU is a single IGBT that can be used for a variety of high-power applications including power conversion, drive systems, servo control, and frequency inverters. It features a three-terminal semiconductor device, with an insulated gate field-effect transistor and a bipolar transistor included in the same package, enabling the IGBT to switch on and off quickly and efficiently. The application field and working principle of FGH75N60SFTU make it a popular choice among those seeking a single IGBT with an excellent power-to-performance ratio.

The specific data is subject to PDF, and the above content is for reference