FGH75T65UPD Discrete Semiconductor Products |
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Allicdata Part #: | FGH75T65UPD-ND |
Manufacturer Part#: |
FGH75T65UPD |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | IGBT 650V 150A 375W TO-247AB |
More Detail: | IGBT Trench Field Stop 650V 150A 375W Through Hole... |
DataSheet: | FGH75T65UPD Datasheet/PDF |
Quantity: | 1000 |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
Power - Max: | 375W |
Supplier Device Package: | TO-247-3 |
Package / Case: | TO-247-3 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Reverse Recovery Time (trr): | 85ns |
Test Condition: | 400V, 75A, 3 Ohm, 15V |
Td (on/off) @ 25°C: | 32ns/166ns |
Gate Charge: | 385nC |
Input Type: | Standard |
Switching Energy: | 2.85mJ (on), 1.2mJ (off) |
Series: | -- |
Vce(on) (Max) @ Vge, Ic: | 2.3V @ 15V, 75A |
Current - Collector Pulsed (Icm): | 225A |
Current - Collector (Ic) (Max): | 150A |
Voltage - Collector Emitter Breakdown (Max): | 650V |
IGBT Type: | Trench Field Stop |
Moisture Sensitivity Level (MSL): | -- |
Part Status: | Active |
Lead Free Status / RoHS Status: | -- |
Packaging: | Tube |
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The FGH75T65UPD is a part of IGBTs, more specifically single IGBTs, and is widely used. In brief, FGH75T65UPD is an Insulated Gate Bipolar Transistor (IGBT) and it is produced with the process of insulated-gate field effect technology. With this latest technology, it is possible to control high voltages in high speed applications. This IGBT has a reverse conducting capability to switch and control the high power flux.
As for its application field, the FGH75T65UPD is widely used for several applications due to its wide variety of features and power handling capabilities. For instance, it can be used in multiple applications such as switching, welding, and motor control. It is also used in converters, inverters, power amplifiers, and rectifiers. Furthermore, the FGH75T65UPD can be used for switching applications such as in power supplies, medical equipment, and light-emitting diode (LED) lighting.
In terms of its working principle, the FGH75T65UPD combines the characteristics of a transistor and a thyristor. This type of device works with a three-terminal system, usually composed of the anode, cathode, and gate. An electrical signal is given to the Gate of the device and this causes a change in the conduction state of the device, thus allowing either current to flow or stop its flow. As mentioned before, this device uses insulated-gate field effect technology, which makes its switching on and off times much faster than other transistors. In addition, it has an excellent high voltage control capability as well as high current control.
The FGH75T65UPD provides a wide range of advantages. It is capable of operating at lower switching losses, higher frequencies, and over a broad temperature range. It also offers a high input impedance, low current leakage, and low input capacitance. Moreover, it is capable of surviving extreme surge voltages and has a high dv/dt. This type of IGBT also features an ultra-fast soft-switching characteristic, which allows the device to switch with minimal losses and minimal noise.
The FGH75T65UPD is undoubtedly an invaluable part of IGBTs. With its robust design and its wide range of features, this kind of IGBT can be used in many applications, including switching, welding, motor control, and other power applications. Furthermore, its ability to control both high voltages and high currents makes it ideal for high-performance power supplies and medical equipment.
The specific data is subject to PDF, and the above content is for reference
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